Jingfeng Li
University of South Florida
11 Papers
5 Citations
Jingfeng Li is an academic researcher from University of South Florida. The author has contributed to research in topics: Monolayer & Scanning tunneling microscope. The author has an hindex of 3, co-authored 6 publications.
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Papers
Molecular Beam Epitaxy of Transition Metal (Ti-, V-, and Cr-) Tellurides: From Monolayer Ditellurides to Multilayer Self-Intercalation Compounds.
Kinga Lasek,Paula Mariel Coelho,Krzysztof Zberecki,Yan Xin,Sadhu Kolekar,Jingfeng Li,Matthias Batzill +6 more
TL;DR: It is shown by a combination of in-situ sample characterization and comparison with computational predictions that ML di-tellurides with octahedral 1T structure are readily grown, but for multilayers, the transition metal dichalcogenide (TMDC) formation competes with self-intercalated compounds.
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Synthesis and characterization of 2D transition metal dichalcogenides: Recent progress from a vacuum surface science perspective
Kinga Lasek,Jingfeng Li,Sadhu Kolekar,Paula Mariel Coelho,Lu'an Guo,Lu'an Guo,Lu'an Guo,Min Zhang,Zhiming Wang,Matthias Batzill +9 more
TL;DR: A comprehensive overview of vacuum studies of fundamental materials' properties of TMDs and their applications can be found in this article, where the authors focus on the characterization of vacuum synthesized materials in their ultrathin limit.
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Monolayer Modification of VTe2 and Its Charge Density Wave.
Paula Mariel Coelho,Kinga Lasek,Kien Nguyen Cong,Jingfeng Li,Wei Niu,Wei Niu,Wenqing Liu,Ivan Oleynik,Matthias Batzill +8 more
TL;DR: Phonon-dispersion calculations show that the 1T-structure exhibits imaginary phonon modes that lead to a charge density wave (CDW) instability, which is also observed by low temperature scanning tunneling microscopy as a 4x4 periodic lattice distortion.
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Edge and Point‐Defect Induced Electronic and Magnetic Properties in Monolayer PtSe2
Jingfeng Li,T. Joseph,Mahdi Ghorbani-Asl,Sadhu Kolekar,Arkady V. Krasheninnikov,Matthias Batzill +5 more
TL;DR: In this article , the electronic structure of edges and point defects in 2D-PtSe2 are investigated where the 1.8 eV bandgap of monolayer PtSe2 facilitates the detailed characterization of defect-induced gap states by scanning tunneling microscopy (STM) with density functional theory (DFT).
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