Jimin Park
5 Papers
Jimin Park is an academic researcher. The author has contributed to research in topics: Medicine & Field-effect transistor. The author has an hindex of 1, co-authored 5 publications.
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Papers
Multifunctional microelectronic fibers enable wireless modulation of gut and brain neural circuits.
Atharva Sahasrabudhe,Laura E. Rupprecht,Sirma Orguc,Tural Khudiyev,Joanna Sands,Weikun Zhu,Anthony Tabet,Marie Manthey,Gabriel Loke,Marc-Joseph Antonini,Dekel Rosenfeld,Jimin Park,Indie C. Garwood,Wei-Mon Yan,Farnaz Niroui,Yoel Fink,Anantha P. Chandrakasan,Diego V. Bohórquez,Polina Anikeeva +18 more
TL;DR: In this paper , the authors describe multifunctional neural interfaces that combine the scalability and mechanical versatility of thermally drawn polymer-based fibers with the sophistication of microelectronic chips for organs as diverse as the brain and the gut.
Junctionless Electric-Double-Layer MoS2 Field-Effect Transistor with a Sub-5 nm Thick Electrostatically Highly Doped Channel.
TL;DR: In this article , the authors presented the first junctionless electric-double-layer field effect transistor with an electrostatically highly doped 5 nm thick MoS2 channel, which demonstrated good transfer characteristics with a 104 on-off current ratio, a 70 mV dec-1 subthreshold swing at a 0 V bottom-gate bias, and drain-current versus top-gate-voltage characteristics were shifted left significantly with increasing bottomgate bias.
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Electrostatically Controllable Channel Thickness and Tunable Low-Frequency Noise Characteristics of Double-Gated Multilayer MoS2 Field-Effect Transistors with h-BN Dielectric.
TL;DR: In this paper , double-gated multilayer MoS2 transistors using the h-BN dielectric for the top gate and silicon dioxide for the bottom gate were investigated.
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Two-dimensional material-based complementary ambipolar field-effect transistors with ohmic-like contacts
TL;DR: In this article , a two-dimensional (2D) material-based complementary ambipolar FET and its electrical characteristics are investigated, where the symmetry of electron and hole currents can be easily achieved by optimization of the MoS2 or WSe2 channels, different from the conventional ambipolar field effect transistors with fundamental issues related to Schottky barriers.