This study develops a compact balun layout to minimize amplitude imbalance. Three baluns with different metal layers are fabricated using 0.13-?m CMOS technology and their imbalance performance evaluated. Measurement made using eight metal layers in coil windings at a particular layout reveal that the proposed device exhibits minimal amplitude and phase imbalance of 0.2 dB and ±0.5° with a chip outer dimension of 100 ?m .

Design of an On-Chip Balun With a Minimum Amplitude Imbalance Using a Symmetric Stack Layout

In this article, a passive balun for 3 T magnetic resonance imaging (MRI) scanners operating at 128 MHz was designed and analyzed to successfully convert a balanced input signal from a dipole/loop antenna into an unbalanced output signal connected to preamplifiers or transmission line. The lumped circuit element, mathematical modeling and simulations and measurement results for the balun performance are shown. The proposed balun is intended to be integrated in electric and magnetic field probes for time domain monitoring of the time-varying RF signals during medical device testing. The implemented balun is fabricated on a low-cost, copper cladded, four-layer FR4 printed circuit board (PCB) with overall footprint of 13.4 mm $\times 14$ mm. A comparison among the ADS momentum simulations and the measured results indicates good agreement with the measured insertion and return losses of better than -1.5 dB and -15 dB, respectively.

PCB Fabricated Passive RF Balun for 3 T MRI Applications

Millimeter-wave concurrent dual-band BiCMOS RFIC transmitter for radar and communication systems

In this paper we present a simple while comprehensive analytical design procedure for distributed amplifiers. Distributed amplifiers are attractive for designers due to their wideband capability. When designing a distributed amplifier, the first question that comes to mind is how wide the bandwidth can be. This paper answers this question by using the self-matching and low-pass properties of a distributed amplifier. Self-matching property of a distributed power amplifier is an interesting point that distinguishes it from other types of power amplifiers that are usually based on input and output matching networks. Here the estimation of the bandwidth of a distributed amplifier structure is discussed. The equations that are used in this paper can bring good insight and they can assist designers. Furthermore, we have explained the frequency behavior of a tapered distributed amplifier analytically for the first time. In order to validate the approach presented here, we have used published designs including our previously published design as practical examples. The flowchart of the design procedure is also provided.

pdf/a-systematic-analytical-design-procedure-for-distributed-10v31qwbsxqe.pdf

A Systematic Analytical Design Procedure for Distributed Amplifiers

This article intends to design, simulate, and implement a dummy load coil, a very significant element, in the Loran transmitter system. In order to ensure the impedance matching, the solenoid coil is designed with an inductance range from 200 to 300 $\mu \text{H}$ . Analytical and finite-element methods are deployed as the most common practice solutions to calculate and simulate the coil inductance. The results obtained from these two methods are compared, and their accuracy and effectiveness are analyzed based on the experimentally implemented coil. Furthermore, a new method is devised to calculate the inductance of the solenoid coil containing numerous wire strands.

Design, Simulation, and Implementation of Stranded Solenoid Coil With Variable Inductance for Use in Loran Transmitter

The design of a broadband monolithic passive balun using planar-spiral transformers structure is described. Operational frequencies of the range from 15 GHz to 35 GHz and the center frequency is 23.3 GHz. The performance of the balun is simulated, and the results are: the single port power loss (port-to-port conversion loss) is less than 7 dB. The amplitude and phase unbalance are less than 0.5 dB and 5° , respectively, over 16-30 GHz frequency band.

The Design of a Planar-Spiral Transformers Balun Used in RF/MW Based on 0.13 μm CMOS Process

Analysis and design of an mm-wave wideband distributed power amplifier (PA) based on SMIC 40nm CMOS technology are presented. Stacked structure based on triple cascode cells forms the power cells of the distributed amplifier. Combining the active power division and power combination networks, the distributed amplifier achieves a simulated output 1dB compression point $(OP_{1dB})$ 15.04dBm, peak power-added efficiency (PAE) of 6% and a saturated output power $(P_{sat})$ of 19.45 dBm at 24 GHz. The amplifier achieves maximum gain of higher than 22dB in the simulated bandwidth from 14 to 34 GHz.

High-gain Broadband CMOS Distributed Power Amplifier for 5G Communications

An elementary formula for the calculation of mutual inductance between two filamentous conductors is derived from a physical formula. According to GMD (Geometric Mean Distance) method and thickness modification, a set of advanced analytical formula for both self and mutual inductance is presented. Due to the analytical formulas, the method is more effective than method based on FEA and more precise than empirical formula and fitting data techniques. Using this technique, inductors of different parameters are calculated. Compared with published experimental measured data, we could verify the validity and accuracy of this method.

An analytical method for the calculation of self and mutual inductance on RF circuit

The design of a new broadband monolithic passive balun using planar-spiral inductor transformers structure is described. Operational frequencies of the range from 15 GHz to 40 GHz and the center frequency is about 20 GHz. The performance of the balun is simulated, and the results are: the single port power loss is less than 6 dB. The amplitude and phase unbalance are less than 0.5 dB and 5 degree, at 15-40 GHz frequency bandwidth, respectively.

The design of a new spiral inductor balun used in RF/MW based on 0.13μm CMOS process

The design of a broadband monolithic passive balun using planar-spiral transformers structure is described. Operational frequencies range from 20-30 GHz, and the center frequency is 23 GHz. The performance of the balun is simulated, and results are: the amplitude and phase unbalance between two balanced ports are less than 3 dB and from 20 to 30 GHz for the same frequency range 10deg, respectively, and for the same frequency range and the single port power loss is less than 12 dB

A Broadband Monolithic Balun Based on 0.13/spl mu/m CMOS Process Using Planar-Spiral Transformers

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