Metal-halide perovskites have rapidly emerged as one of the most promising materials of the 21st century, with many exciting properties and great potential for a broad range of applications, from photovoltaics to optoelectronics and photocatalysis. The ease with which metal-halide perovskites can be synthesized in the form of brightly luminescent colloidal nanocrystals, as well as their tunable and intriguing optical and electronic properties, has attracted researchers from different disciplines of science and technology. In the last few years, there has been a significant progress in the shape-controlled synthesis of perovskite nanocrystals and understanding of their properties and applications. In this comprehensive review, researchers having expertise in different fields (chemistry, physics, and device engineering) of metal-halide perovskite nanocrystals have joined together to provide a state of the art overview and future prospects of metal-halide perovskite nanocrystal research.

State of the Art and Prospects for Halide Perovskite Nanocrystals.

Ferroelectrics are essential components in a wide range of applications, including ultrasonic transducers, sensors, and actuators. In the single crystal form, relaxor-PbTiO3 (PT) piezoelectric materials have been extensively studied due to their ultrahigh piezoelectric and electromechanical properties. In this article, a perspective and future development of relaxor-PT crystals are given. Initially, various techniques for the growth of relaxor-PT crystals are reviewed, with crystals up to 100 mm in diameter and 200 mm in length being readily achievable using the Bridgman technique. Second, the characterizations of dielectric and electromechanical properties are surveyed. Boundary conditions, including temperature, electric field, and stress, are discussed in relation to device limitations. Third, the physical origins of the high piezoelectric properties and unique loss characteristics in relaxor-PT crystals are discussed with respect to their crystal structure, phase, engineered domain configuration, macr...

/pdf/high-performance-ferroelectric-relaxor-pbtio3-single-3cp5am04w0.pdf

High performance ferroelectric relaxor-PbTiO3 single crystals: Status and perspective

Piezoelectric materials that can function at high temperatures without failure are desired for structural health monitoring and/or nondestructive evaluation of the next generation turbines, more efficient jet engines, steam, and nuclear/electrical power plants. The operational temperature range of smart transducers is limited by the sensing capability of the piezoelectric material at elevated temperatures, increased conductivity and mechanical attenuation, variation of the piezoelectric properties with temperature. This article discusses properties relevant to sensor applications, including piezoelectric materials that are commercially available and those that are under development. Compared to ferroelectric polycrystalline materials, piezoelectric single crystals avoid domain-related aging behavior, while possessing high electrical resistivities and low losses, with excellent thermal property stability. Of particular interest is oxyborate [ReCa4O (BO3)3] single crystals for ultrahigh temperature applications (>1000°C). These crystals offer piezoelectric coefficients deff, and electromechanical coupling factors keff, on the order of 3–16 pC/N and 6%–31%, respectively, significantly higher than those values of α-quartz piezocrystals (~2 pC/N and 8%). Furthermore, the absence of phase transitions prior to their melting points ~1500°C, together with ultrahigh electrical resistivities (>106 Ω·cm at 1000°C) and thermal stability of piezoelectric properties (< 20% variations in the range of room temperature ~1000°C), allow potential operation at extreme temperature and harsh environments.

Piezoelectric Materials for High Temperature Sensors

Relaxor-based ferroelectric single crystals: growth, domain engineering, characterization and applications.

A review on graphitic carbon nitride (g-C3N4) based nanocomposites: Synthesis, categories, and their application in photocatalysis

The red-emitting phosphors Ca2AlNbO6: xmol%Mn4+ (CAN: xmol%Mn4+) (0.1 ≤ x ≤ 0.9) were successfully synthesized via a conventional high temperature solid-state method at air atmosphere. A band was located at 320 nm in diffuse reflection spectra (DRS) because of the spin-allowed 4A2g → 4T1g transition of Mn4+. Moreover, there were two broad bands located at photoluminescence excitation (PLE) spectra due to the spin-allowed transitions of Mn4+ upon the excitation of 712 nm. And the phosphors exhibited the far-red emission bands centered at ~ 712 nm on account of the spin-forbidden 2Eg → 4A2g transition of Mn4+ under the excitation of 355 nm. And the optimum one was CAN: 0.3 mol%Mn4+ which yields the brightest red light due to the concentration quenching effect. Furthermore, it could be confirmed that the existence of nonradiative among Mn4+ ions because the lifetime of the phosphors was decreased as the concentration of Mn4+ in CAN increased from 0.1% to 0.9 mol%. The average lifetime of the phosphors was in the range of miscroscend. In addition, the CIE chromaticity coordinates of CAN: 0.3 mol%Mn4+ were (0.7319, y = 0.2618). Finally, a blue LED chip combined with YAG: Ce3+ yellow and CAN: 0.3 mol% Mn4+ red phosphors to fabricate a warm white light emitting-diode (WLED). And the CIE chromaticity coordinates, color rendering index (CRI) and the corrected color temperature (CCT) of the device were (0.3799, 0.3432), 74.2 and 3727 K, respectively.

Double-perovskite Ca 2 AlNbO 6 : Mn 4+ red phosphor for white light emitting diodes: synthesis, structure and luminescence properties

The invention relates to an improved falling crucible method growth method for compound semiconductor arsenide gallium monocrystal. The growth method comprises the following steps: a multi-position falling crucible furnace is used for the growth of compound semiconductor GaAs monocrystal; the furnace is designed with a plurality of positions, and can be used for the growth of a plurality of crystals; a raw material for high-purity arsenic-enriched multicrystal GaAs is synthesized first, and generally, the arsenic-enriched quantity is not more than 1mol percent; the raw material is fed into a PBN crucible with the bottom provided with crystal seed and seed crystal, and the PBN crucible is placed inside the static stable falling crucible furnace; the falling crucible furnace is designed with three temperature zones, namely a high-temperature zone T1, a gradient zone T2 and a low-temperature zone T3 which respectively plays a role in material smelting, growth and heat preservation; moreover, the furnace temperature is controlled to between 1,250 and 1,290 DEG C, and the position of the crucible is adjusted so as to ensure that the top of the seed crystal is molten; then the temperature is reduced at the speed between 0.2 and 3 millimeters/hour so as to start crystal growth; and when crystal growth is finished, in situ annealing of the crystal is carried out through adjusting the position of the crucible and controlling the furnace temperature. The improved falling crucible growth method has the advantages that the growth method combines the advantages of the prior VB method and VGF method, and adopts a plurality of crucibles so as to increase crystal yield; moreover, an in situ annealing method is adopted to overcome the disadvantage of dislocation caused by thermal stress.

Improved Bridgman-Stockbarger method for compound semiconductor GaAs single crystal

The photorefractive crystal, Bi2TeO5, was grown by the modified Bridgman method for the first time. High purity Bi2O3 and TeO2 were used as starting materials and were mixed thoroughly with molar ratio of Bi2O3/TeO2 = 1 ∶ 1. Platinum crucible was fabricated with a seed well of 10 mm in diameter and several folds were pressed so that the spontaneous nuclei could be eliminated through competition. The crucible was sealed during the growth so that the evaporation of TeO2 was controlled effectively. By optimizing growth parameters, transparent and crack-free Bi2TeO5 crystal up to 25 mm in diameter and 40 mm in length was grown successfully.

/pdf/bridgman-growth-of-bismuth-tellurite-crystals-1kji837xna.pdf

Bridgman growth of bismuth tellurite crystals

Bridgman growth of Bi4Si3O12 scintillation crystals

Optical and Scintillation Properties of Bi4(GexS1−x)3O12 Single Crystal X.-F. Xiao, J.-Y. Xu, B.-L. Lu, W. Cai, Y. Zhang, H. Shen, B.-B. Yang and W.-D. Xiang School of Materials Science and Engineering, Tongji University, Shanghai 201804, P.R. China School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, P.R. China Department of Fundamental Science, Beifang University of Nationalities, Yinchuan 750021, P.R. China

http://przyrbwn.icm.edu.pl/APP/PDF/127/a127z3p36.pdf

Optical and Scintillation Properties of Bi4(GexS1-x)3O12Single Crystal

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