Jianping Li
Chinese Academy of Sciences
30 Papers
203 Citations
Jianping Li is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Metalorganic vapour phase epitaxy & Layer (electronics). The author has an hindex of 12, co-authored 30 publications.
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Papers
AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD
Xiaoliang Wang,Guoxin Hu,Zhiyong Ma,Junxue Ran,Cuimei Wang,Hongling Xiao,Jian Tang,Jianping Li,Junxi Wang,Yiping Zeng,Jinmin Li,Zhanguo Wang +11 more
TL;DR: In this article, an AlGaN/GaN high electron mobility transistor (HEMT) was demonstrated by employing the combination of a high mobility GaN channel layer and an AlN interlayer.
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Photovoltaic effects in InGaN structures with p–n junctions
Cuibai Yang,Xiaoliang Wang,Hongling Xiao,Junxue Ran,Cuimei Wang,Guoxin Hu,Xinhua Wang,Xiaobin Zhang,Jianping Li,Jinmin Li +9 more
TL;DR: In this article, double-crystal X-ray diffraction measurements were used to evaluate the room temperature band gaps of InGaN and n-InGaN photovoltaic structures.
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Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD
Weijun Luo,Xiaoliang Wang,L.W. Guo,Hongling Xiao,Cuimei Wang,Junxue Ran,Jianping Li,Jinmin Li +7 more
TL;DR: The results demonstrate that the morphology and crystalline properties of the GaN epilayer strongly depend on the thickness of HT AlN buffer layer, and the optimized thickness of the HT Aln buffer layer is about 110nm.
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Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD
Weijun Luo,Xiaoliang Wang,Hongling Xiao,Cuimei Wang,Junxue Ran,L.W. Guo,Jianping Li,Hongxin Liu,Yanling Chen,Fuhua Yang,Jinmin Li +10 more
TL;DR: AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (111) substrate using metal-organic chemical vapor deposition (MOCVD) to relieve the tension stress during the growth of GaN epilayers.
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Synthesis and structure of nanocrystal-assembled bulk GaN
Xiaolong Chen,Y.G. Cao,Yanyan Lan,Xuejun Xu,Jianping Li,Kunquan Lu,Peng Jiang,Tongren Xu,Z. G. Bai,Yuan-Huan Yu,Jiben Liang +10 more
TL;DR: In this article, a new condensed form of GaN, nanocrystal assembled bulk (NAB) GaN was obtained directly from reactions of metal Ga and NH4Cl in liquid ammonia at 350-500 degrees C. High-resolution transmission electron microscopy observations reveal that the NAB GaN consists of well-crystallized nanocrystals with wurtzite structure.
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