The electronics industry has witnessed a surge in demand for semiconductor materials, prompting researchers to explore active semiconductors that can effectively meet the growing needs of this sector. Among these materials, indium oxide (In2O3) is a potential candidate for developing thin-film transistors (TFTs) in organic light-emitting diodes. This emergence is due to the favourable characteristics of In2O3, such as high carrier mobility, low processing temperature, strong electrical uniformity, transparency to visible light, and low cost. Currently, In2O3-based TFTs are fabricated with excellent properties, including electron mobility up to 400 cm2 / V s, subthreshold swing as low as 0.13 V/decade, on/off current ratio up to 108, a threshold voltage of approximately 1 to 3 V, and transparency up to 90% in the visible range. Hence, this review aims to provide an overview of the carrier transport mechanism of metal oxide semiconductor materials, specifically focusing on In2O3-based TFTs (amorphous and crystalline). Furthermore, this study discusses the structural properties of pure, doped, homojunction, heterojunction, and other In2O3-based TFTs before demonstrating the recent advancements in the field. Lastly, this review presents potential outcomes and future perspectives of In2O3-based TFTs in developing semiconductor technology. Based on this review, In2O3-based TFTs are effectively explored regarding their future integration into modern technologies. 

Recent advances of In2O3-based thin-film transistors: A review

Epitaxial lift-off techniques, which aim to separate ultrathin single-crystalline epitaxial layers off of the substrate, are becoming increasingly important due to the need of lightweight and flexible devices for heterogeneously integrated ultracompact semiconductor platforms and bioelectronics. Remote epitaxy is a relatively newly discovered epitaxial lift-off technique that allows substrate-seeded epitaxial growth of ultrathin films through few layers of graphene. This universal epitaxial lift-off technique allows freestanding single-crystal membrane fabrication very quickly at low cost. However, the conventional method of remote epitaxy requires transfer of graphene grown on another substrate to the target single-crystalline substrate, which results in organic and metallic residues as well as macroscopic defects such as cracks and wrinkles, significantly reducing the yield of remote epitaxy. Here, we show that direct growth of thick graphene on the target single-crystalline substrate (SrTiO3 for this study) followed by atomic layer etching (ALE) of the graphene layers create a defect- and residue-free graphene surface for high yield remote epitaxy. We find that the ALE efficiently removes one atomic layer of graphene per cycle, while also clearing multi-dots (clumps of carbon atoms) that form during nucleation of the graphene layers. Our results show that direct-grown graphene on the desired substrate accompanied by ALE might potentially be an ideal pathway toward commercialization of remote epitaxy.

https://aip.scitation.org/doi/pdf/10.1063/5.0087890

Atomic layer-by-layer etching of graphene directly grown on SrTiO3 substrates for high-yield remote epitaxy and lift-off

Optical synaptic devices are considered a preferred substitute to electrical synapses for low‐energy, high‐efficiency neuromorphic computing (NC). However, most optical synapses irreversible optical response severely restricts their application scenarios. In this study, a fully photon‐modulated synaptic device constructed from Si‐doped beta‐gallium oxide (β‐Ga2O3)/ZnO heterojunction is demonstrated. The device exhibits reversible conductance changes and mimics a range of synaptic behaviors, which are modulated by two different wavelengths (255 and 370 nm) of UV light. Owing to the device's plasticity, four types of logic functions including “AND”, “OR”, “NOR” and “NAND” are implemented in the device by optical stimulation. Furthermore, an artificial neural network (ANN) is simulated based on the device's excitatory and inhibitory characteristics, and an optical programming scheme is employed to enhance the network's performance, resulting in a high recognition rate of 95.5% for handwritten digits. The fully photon‐modulated synapse development strategy and programming scheme, as presented in this work, advance the utilization of optical artificial synapses in ANN.

Fully UV Modulated Artificial Synapses with Integrated Sensing, Storage and Computation

Incorporation of ZnO / Ag-ZnO nanoparticles into a cotton fiber by the LbL method for Self-Cleaning applications

Epitaxially grown III-nitride alloys are tightly bonded materials with mixed covalent-ionic bonds. This tight bonding presents tremendous challenges in developing III-nitride membranes, even though semiconductor membranes can provide numerous advantages by removing thick, inflexible, and costly substrates. Herein, cavities with various sizes were introduced by overgrowing target layers, such as undoped GaN and green LEDs, on nanoporous templates prepared by electrochemical etching of n-type GaN. The large primary interfacial toughness was effectively reduced according to the design of the cavity density, and the overgrown target layers were then conveniently exfoliated by engineering tensile-stressed Ni layers. The resulting III-nitride membranes maintained high crystal quality even after exfoliation due to the use of GaN-based nanoporous templates with the same lattice constant. The microcavity-assisted crack propagation process developed for the current III-nitride membranes forms a universal process for developing various kinds of large-scale and high-quality semiconductor membranes. 

Large-scale and high-quality III-nitride membranes through microcavity-assisted crack propagation by engineering tensile-stressed Ni layers

Epitaxy and bonding of peelable ZnO film on graphene/ZnO substrate

Here, we report on the epitaxial growth of GaN on patterned SiO2-covered cone-shaped patterned sapphire surfaces (PSS). Physical vapor deposition (PVD) AlN films were used as buffers deposited on the SiO2-PSS substrates. The gallium nitride (GaN) growth on these substrates at different alternating radio frequency (RF) power and nitridation times was monitored with sequences of scanning electron microscopy (SEM) and atomic force microscopy (AFM) imaging results. The SEM and AFM show the detail of the crystalline process from different angles. Our findings show that the growth mode varies according to the deposition condition of the AlN films. We demonstrate a particular case where a low critical alternating current (AC) power is just able to break SiO2 covalent bonds, enabling the growth of GaN on the sides of the patterns. Furthermore, we show that by using the appropriate nitridation condition, the photoluminescence (PL) integral and peak intensities of the blue light epi-layer were enhanced by more than 5% and 15%, respectively. It means the external quantum efficiency (EQE) of epitaxial structures is promoted. The screw dislocation density was reduced by 65% according to the X-ray diffraction (XRD) spectra.

/pdf/the-effect-of-nitridation-on-sputtering-aln-on-composited-1dbsu802.pdf

The Effect of Nitridation on Sputtering AlN on Composited Patterned Sapphire Substrate

Improved β-Ga2O3 Solar-Blind Deep-Ultraviolet Thin-Film Transistor Based on Si-Doping

Improved epitaxy of ZnO films by regulating the layers of graphene

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Papers

Epitaxy and bonding of peelable ZnO film on graphene/ZnO substrate

The Effect of Nitridation on Sputtering AlN on Composited Patterned Sapphire Substrate

Improved β-Ga2O3 Solar-Blind Deep-Ultraviolet Thin-Film Transistor Based on Si-Doping

Improved epitaxy of ZnO films by regulating the layers of graphene