Jiang Y. Wang
Max Planck Society
16 Papers
57 Citations
Jiang Y. Wang is an academic researcher from Max Planck Society. The author has contributed to research in topics: Amorphous solid & Chemistry. The author has an hindex of 5, co-authored 7 publications.
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Papers
Fundamentals of metal-induced crystallization of amorphous semiconductors
TL;DR: In this article, a general quantitative model has been developed that provides fundamental understanding of the metal-induced crystallization (MIC) of amorphous semiconductors, and it has been employed to predict the MIC temperature for various metal/amorphous-semiconductor systems.
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Tailoring the ultrathin Al-induced crystallization temperature of amorphous Si by application of interface thermodynamics
TL;DR: It has been demonstrated theoretically and experimentally that the thickness of a very thin, pure Al film put on top of an amorphous Si (a-Si) layer can be used as a very accurate tool to control the crystallization temperature of a-Si.
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Metal-catalyzed growth of semiconductor nanostructures without solubility and diffusivity constraints.
Zumin Wang,Lin Gu,Fritz Phillipp,Jiang Y. Wang,Lars P. H. Jeurgens,Eric J. Mittemeijer,Eric J. Mittemeijer +6 more
TL;DR: The present study reveals, using in situ heating electron microscopy, that metal-catalyzed growth of semiconductor nanostructures can be realized without solubility and diffusivity constraints, thereby enabling strikingly low growth temperatures.
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A new method for the determination of the diffusion-induced concentration profile and the interdiffusion coefficient for thin film systems by Auger electron spectroscopical sputter depth profiling
TL;DR: In this paper, a new Auger electron spectroscopical sputter depth profiling method was developed to determine the interdiffusion coefficient for the initial stage of diffusion annealing of thin films.
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Ultrathin flexible linear-piezoelectric ZnO thin film actuators: tuning the piezoelectric responses by in-plane epitaxial strain
TL;DR: In this paper , a linear piezoelectric zinc oxide (ZnO) thin film actuators are fabricated with a sandwich structure of AZO/Zn O/AZO epitaxially on CeO2/Hastelloy substrates.
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