Jiang He
Xiangtan University
5 Papers
11 Citations
Jiang He is an academic researcher from Xiangtan University. The author has contributed to research in topics: High-electron-mobility transistor & Transconductance. The author has an hindex of 2, co-authored 5 publications.
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Papers
Hydrogen effects on AlGaN/GaN MISFET with LPCVD-SiNx gate dielectric
Abstract: In this work, the effects of hydrogen on an AlGaN/GaN metal insulator semiconductor field effect transistor (MISFET) with SiNx gate dielectric were investigated. It is found that after hydrogen exposure, (1) the AlGaN/GaN MISFET exhibits better DC performance with larger maximum transconductance, (2) the gate lag phenomenon is effectively suppressed and (3) the 1/f noise performance is improved with lower noise magnitude. These results are different from previous observations in other III–V semiconductor devices. Based on the theoretical analysis by space charge limited current and low-frequency noise models, we propose that the hydrogen treatment induces hydrogen incorporation into SiNx, which could passivate the defect centers. These findings demonstrate the high hydrogen tolerance of AlGaN/GaN MISFETs.
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The ESD Behavior of Enhancement GaN HEMT Power Device with p-GaN Gate Structure
Juntu Feng,He Zhiyuan,Yun-Fei En,Huang Yun,Chen Yiqiang,Jiang He,Tao Yin,Guoyuan Li +7 more
- 01 Nov 2018
TL;DR: In this article, the authors investigated the ESD robustness of GaN HEMT power devices with p-GaN gate structure and found that such a structure has a stable performance under positive stresses on the Gate, but the devices turn to be unstable when negative ones are applied.
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Investigation of Temperature-Dependent Electrical Behavior and Trap Effect in AlGaN/GaN HEMT
FaMing Feng,Chen Yiqiang,XinBin Xu,YongTao Yu,XiaoQiang Wang,Jiang He,Guoyuan Li +6 more
- 01 Nov 2018
TL;DR: In this paper, temperature-dependent electrical behavior and trap effect in AlGaN/GaN high-electron mobility transistors (HEMT) were investigated at temperatures ranging from 25 °C to 125°C.
3
Patent
Gas concentration detection device and gas concentration detection method
Chen Yiqiang,Jiang He,En Yunfei,Shi Qian,Huang Yun,Ping Lai,Huang Yalan,Wu Mouzhi,Liu Yuan +8 more
- 05 Jun 2018
TL;DR: In this article, a gas concentration detection device consisting of a vacuum detection cavity, a gas detection sensor, a vacuum sampling element and a detection analyzer was proposed. But the detection results were not accurate.
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Patent
Gas concentration control method and device, storage medium, and computer equipment
Chen Yiqiang,Shi Qian,En Yunfei,Ping Lai,Huang Yun,Jiang He,Wu Mouzhi +6 more
- 19 Jun 2018
TL;DR: In this article, a gas concentration control method and device, a storage medium, and computer equipment are provided, which consists of the following steps: respectively calculating the first and second internal-external air pressure difference theoretical values of a vacuum sealed cavity according to a preset target gas concentration, a filling gas concentration and the obtained internal external air pressure different data during the inflation of filling gas and target gas.
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