/pdf/aluminium-nitride-integrated-photonics-a-review-1plld7ea69.pdf

Aluminium nitride integrated photonics: a review

In this paper, we fabricate and demonstrate a functional complementary metal-oxide-semiconductor (CMOS) compatible pyroelectric uncooled thermal detector using 12% doped Scandium Aluminum Nitride (ScAlN) as the sensing layer. The ScAlN pyroelectric material is deposited at a temperature of ∼200 °C over an 8-in. wafer area. This detector has shown, in general, improved performance compared to AlN, with specific detectivity as high as ∼ 6.08 × 10 7 cm Hz / W and noise equivalent power as low as ∼ 8.85 × 10 − 10 W / Hz. The results show the specific detectivity of ScAlN-based pyroelectric detectors in the range of 107 cm Hz / W, which is an improvement compared to AlN-based pyroelectric detectors which report specific detectivity typically in the range of 105–106 cm Hz / W. This promising result opens up the opportunities for a CMOS compatible, 8-in. wafer-level manufacturable lead-free pyroelectric detector toward low cost and high throughput, allowing microelectromechanical systems (MEMS) and CMOS integration for increased applications in CMOS–MEMS integrated devices utilizing pyroelectric detectors.

/pdf/a-functional-cmos-compatible-mems-pyroelectric-detector-4u53wqwh3x.pdf

A functional CMOS compatible MEMS pyroelectric detector using 12%-doped scandium aluminum nitride

Abstract Silicon photonics has gained great success mainly due to the promise of realizing compact devices in high volume through the low-cost foundry model. It is burgeoning from laboratory research into commercial production endeavors such as datacom and telecom. However, it is unsuitable for some emerging applications which require coverage across the visible or mid infrared (mid-IR) wavelength bands. It is desirable to introduce other wideband materials through heterogeneous integration, while keeping the integration compatible with wafer-scale fabrication processes on silicon substrates. We discuss the properties of silicon-family materials including silicon, silicon nitride, and silica, and other non-group IV materials such as metal oxide, tantalum pentoxide, lithium niobate, aluminum nitride, gallium nitride, barium titanate, piezoelectric lead zirconate titanate, and 2D materials. Typical examples of devices using these materials on silicon platform are provided. We then introduce a general fabrication method and low-loss process treatment for photonic devices on the silicon platform. From an applications viewpoint, we focus on three new areas requiring integration: sensing, optical comb generation, and quantum information processing. Finally, we conclude with perspectives on how new materials and integration methods can address previously unattainable wavelength bands while maintaining the advantages of silicon, thus showing great potential for future widespread applications.

/pdf/ultra-wideband-integrated-photonic-devices-on-silicon-2ehcg919.pdf

Ultra-wideband integrated photonic devices on silicon platform: from visible to mid-IR

NDIR CO2 gas sensors using a 10-cm-long gas channel and CMOS-compatible 12% doped ScAlN pyroelectric detector have previously demonstrated detection limits down to 25 ppm and fast response time of ∼2 s. Here, we increase the doping concentration of Sc to 20% in our ScAlN-based pyroelectric detector and miniaturize the gas channel by ∼65× volume with length reduction from 10 to 4 cm and diameter reduction from 5 to 1 mm. The CMOS-compatible 20% ScAlN-based pyroelectric detectors are fabricated over 8-in. wafers, allowing cost reduction leveraging on semiconductor manufacturing. Cross-sectional TEM images show the presence of abnormally oriented grains in the 20% ScAlN sensing layer in the pyroelectric detector stack. Optically, the absorption spectrum of the pyroelectric detector stack across the mid-infrared wavelength region shows ∼50% absorption at the CO2 absorption wavelength of 4.26 μm. The pyroelectric coefficient of these 20% ScAlN with abnormally oriented grains shows, in general, a higher value compared to that for 12% ScAlN. While keeping the temperature variation constant at 2 °C, we note that the pyroelectric coefficient seems to increase with background temperature. CO2 gas responses are measured for 20% ScAlN-based pyroelectric detectors in both 10-cm-long and 4-cm-long gas channels, respectively. The results show that for the miniaturized CO2 gas sensor, we are able to measure the gas response from 5000 ppm down to 100 ppm of CO2 gas concentration with CO2 gas response time of ∼5 s, sufficient for practical applications as the average outdoor CO2 level is ∼400 ppm. The selectivity of this miniaturized CO2 gas sensor is also tested by mixing CO2 with nitrogen and 49% sulfur hexafluoride, respectively. The results show high selectivity to CO2 with nitrogen and 49% sulfur hexafluoride each causing a minimum ∼0.39% and ∼0.36% signal voltage change, respectively. These results bring promise to compact and miniature low cost CO2 gas sensors based on pyroelectric detectors, which could possibly be integrated with consumer electronics for real-time air quality monitoring.

Miniaturized CO2 Gas Sensor Using 20% ScAlN-Based Pyroelectric Detector

On-chip devices for absorption spectroscopy and Raman spectroscopy have been developing rapidly in the last few years, triggered by the growing availability of compact and affordable tunable lasers, detectors, and on-chip spectrometers. Material processing that is compatible with mass production has been proven to be capable of long low-loss waveguides of sophisticated designs, which are indispensable for high-light–analyte interactions. Sensitivity and selectivity have been further improved by the development of sorbent cladding. In this review, we discuss the latest advances and challenges in the field of waveguide-enhanced Raman spectroscopy (WERS) and waveguide infrared absorption spectroscopy (WIRAS). The development of integrated light sources and detectors toward miniaturization will be presented, together with the recent advances on waveguides and cladding to improve sensitivity. The latest reports on gas-sensing applications and main configurations for WERS and WIRAS will be described, and the most relevant figures of merit and limitations of different sensor realizations summarized.

Integrated Nanophotonic Waveguide-Based Devices for IR and Raman Gas Spectroscopy

CMOS compatibility and 8-inch manufacturability have been highly desired in MEMS technology. In this article, we demonstrate a MEMS pyroelectric IR detector using CMOS compatible AlN and 8-inch semiconductor wafer technology. This AlN pyroelectric detector detects IR over wavelength ranging from 5 $\mu \text{m}$ to 14 $\mu \text{m}$ . In addition, this detector is designed to have added mechanical stiffness for improved device integrity. The detectors are fabricated with different sensing area dimensions to compare their performance. The best performing detector has an NEP $\sim \,\,8.87\times 10^{\text {-9}}\,\,\text {W/}\sqrt {\text {Hz}} $ and ${D} ^\ast \,\,\sim \,\,6.04\times 10^{{6}}\,\,{\text {cm}\sqrt {\text {Hz}}}/ \text {W}$ . These pyroelectric detectors are designed and built with the consideration to enable ease of monolithic integration with other components to form an integrated gas sensor system. This includes enabling detection of illumination from the front side and using an absorber stack that consists of CMOS dielectric layers. Subsequently, they will form a crucial part of the architectures for miniature photonics-based gas sensors. Their performance is a first step towards 8-inch wafer level CMOS-compatible manufacturable photonics gas sensors. [2020-0157]

/pdf/considerations-for-an-8-inch-wafer-level-cmos-compatible-aln-3ka5mkr1kv.pdf

Considerations for an 8-inch Wafer-Level CMOS Compatible AlN Pyroelectric 5–14 μm Wavelength IR Detector Towards Miniature Integrated Photonics Gas Sensors

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Considerations for an 8-inch Wafer-Level CMOS Compatible AlN Pyroelectric 5–14 μm Wavelength IR Detector Towards Miniature Integrated Photonics Gas Sensors