Jiali Yi
Hunan University
15 Papers
4 Citations
Jiali Yi is an academic researcher from Hunan University. The author has contributed to research in topics: Heterojunction & Transistor. The author has an hindex of 4, co-authored 9 publications.
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Papers
Reconfigurable logic-in-memory architectures based on a two-dimensional van der Waals heterostructure device
Xingxia Sun,Chenguang Zhu,Jiali Yi,Li Xiang,Chaoqun Ma,Huawei Liu,Biyuan Zheng,Yong Xiang Liu,Wenxia You,Wujun Zhang,Delang Liang,Qin Shuai,Xiaoli Zhu,Huigao Duan,Lei Liao,Yuan Liu,Dong Mei Li,Anlian Pan +17 more
TL;DR: A two-dimensional van der Waals heterostructure device that has a partial floating-gate field-effect transistor device architecture can function as both reconfigurable transistor and reconfigured non-volatile memory, as well as provide reconfigured logic-in-memory capabilities.
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Epitaxial synthesis of ultrathin β-In2Se3/MoS2 heterostructures with high visible/near-infrared photoresponse.
Zixing Zou,Dong Li,Junwu Liang,Xuehong Zhang,Huawei Liu,Chenguang Zhu,Xin Yang,Lihui Li,Biyuan Zheng,Xingxia Sun,Zhouxiaosong Zeng,Jiali Yi,Xiujuan Zhuang,Xiao Wang,Anlian Pan +14 more
TL;DR: The controlled growth of vertically stacked β-In2Se3/MoS2 vdWs heterostructures is reported, which broaden the family of the 2D layered heterostructure system and should have significant potential applications in high-performance broadband photodetectors.
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Double-Gate MoS 2 Field-Effect Transistors with Full-Range Tunable Threshold Voltage for Multifunctional Logic Circuits
Jiali Yi,Xingxia Sun,Chenguang Zhu,Shengman Li,Yong Liu,Xiaoli Zhu,Wenxia You,Delang Liang,Qin Shuai,Yanqing Wu,Dong Li,Anlian Pan +11 more
TL;DR: In this article, a double-gate field effect transistor architecture with equal top and bottom gate (TG and BG) was proposed to realize flexible optimization of the subthreshold swing and threshold voltage.
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Controlled growth of SnSe/MoS2 vertical p–n heterojunction for optoelectronic applications
Xingwang Wang,Biyuan Zheng,Jiali Yi,Huawei Liu,Xingxia Sun,Chenguang Zhu,Ying Liu,Lizhen Fang,Dong Li,Anlian Pan +9 more
- 18 Jan 2021
TL;DR: In this paper, the combination of orthogonal selenide (SnSe) with hexagonal MoS2 into p-n heterojunctions through a two-step chemical vapor deposition method was successfully realized.
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