One-dimensional (1D) metal-oxide nanostructures are ideal systems for exploring a large number of novel phenomena at the nanoscale and investigating size and dimensionality dependence of nanostructure properties for potential applications The construction and integration of photodetectors or optical switches based on such nanostructures with tailored geometries have rapidly advanced in recent years Active 1D nanostructure photodetector elements can be configured either as resistors whose conductions are altered by a charge-transfer process or as field-effect transistors (FET) whose properties can be controlled by applying appropriate potentials onto the gates Functionalizing the structure surfaces offers another avenue for expanding the sensor capabilities This article provides a comprehensive review on the state-of-the-art research activities in the photodetector field It mainly focuses on the metal oxide 1D nanostructures such as ZnO, SnO(2), Cu(2)O, Ga(2)O(3), Fe(2)O(3), In(2)O(3), CdO, CeO(2), and their photoresponses The review begins with a survey of quasi 1D metal-oxide semiconductor nanostructures and the photodetector principle, then shows the recent progresses on several kinds of important metal-oxide nanostructures and their photoresponses and briefly presents some additional prospective metal-oxide 1D nanomaterials Finally, the review is concluded with some perspectives and outlook on the future developments in this area

A comprehensive review of one-dimensional metal-oxide nanostructure photodetectors

Recent advances in ultraviolet photodetectors

Plant based green synthesis approaches are gaining prominence due to their simplicity, cost-effectiveness, ecological friendliness, commercial scalability, efficiency in large scale synthesis, and versatility in harnessing a wide range of value added products. Leaf extract based synthesis of metal oxide nanoparticles facilitates the production of non-toxic nanoparticles due to the presence of various phytochemicals and biochemical compounds that are beneficial for biological and pharmaceutical applications. In the current study, leaf extracts from three different plants: Amaranthus tricolor, Andrographis paniculata and Amaranthus blitum were used for the synthesis of magnesium oxide (MgO) nanoparticles. The biophysical characteristics of the synthesized MgO nanoparticles were investigated using ultraviolet-visible spectra and dynamic light scattering techniques. Fourier Transform Infrared (FTIR) spectroscopy and Transmission Electron Microscopy (TEM) were also used to identify and analyze the functional groups accompanying the extracts and the morphology of the nanoparticles respectively. The absorbance at 320 nm from UV-visible spectroscopy indicates the formation of metal oxide in the sample. Key parameters affecting the synthesis process, including temperature, heating time and precursor concentration, were investigated to probe their effects on the stability and particle size distribution of the nanoparticles. The FTIR results showed that the modifications in the functional groups are responsible for the formation of nanoparticles and the peak between 660 and 540 cm−1 confirms the presence of magnesium oxide. The TEM results showed that all the samples demonstrated stability with a particulate size range of 18–80 nm. The process of smaller MgO nanoparticle formation due to utilization of different precursors and leaf extracts was also explained. Overall, the green synthesis approach demonstrated potential for developing highly stable MgO nanoparticles with tight particle size distribution from different plant materials for applications in biosensing and therapeutic development.

Biosynthesis and characterization of MgO nanoparticles from plant extracts via induced molecular nucleation

A novel spindle-shaped graphene oxide (GO) was performed by the self-assembly of graphene oxide in the DMF. Loading uniform ZnO nanoparticles on spindle-shaped GO is used to study antibacterial property. In the ZnO/GO composites, spindle-shaped GO possessed special structure that was crumpled together with a length of ~1.0 μm and a mean diameter of 100 nm, and spherical ZnO particles with a diameter of 50 nm were fully characterized by field-emission scanning electron microscope (FE-SEM), a high-resolution transmission electron microscope (HR-TEM) and X-ray diffraction (XRD). Due to the antibacterial advantages of ZnO and GO, the mechanism underlying the interaction between composites and bacteria is elucidated in this work. The results showed that the composites could prevent bacterial proliferation and could destroy bacterial integrated membrane by the release of Zn2+ and generation of abundant reactive oxygen species (ROS). The typical gram-negative (Escherichia coli and Salmonella typhimurium) and gram-positive (Bacillus subtilis and Enterococcus faecalis) bacteria were used to investigate the significant antibacterial activity of ZnO/GO composites. The minimum inhibit concentration (MIC) value of ZnO/GO composites for the gram-positive bacteria was 31.25 ± 0.25 μg/mL, however, that for the gram-negative bacteria was 15.625 ± 0.5 μg/mL. Based on our study, this new structure composites with good antibacterial activity is regarded as a promising material for application in the medical field.

Synthesis of ZnO nanoparticles-decorated spindle-shaped graphene oxide for application in synergistic antibacterial activity.

By virtue of the carrier avalanche multiplication caused by an impact ionization process occurring in MgO insulation layer, zinc oxide (ZnO)-based ultraviolet (UV) avalanche photodetectors (APDs) have been fabricated from Au/MgO/ZnO/MgO/Au structures. The responsivity of APDs can reach 1.7 x 10(4) AW(-1), and the avalanche gain of the photodetectors is about 294 at 73 V. Considering that no previous report on ZnO APDs can be found, the results reported in this paper may promise a route to high-performance ZnO UV photodetectors.

http://iopscience.iop.org/article/10.1088/0022-3727/46/30/305105/pdf

ZnO-based ultraviolet avalanche photodetectors

To increase the responsivity is one of the vital issues for a photodetector. By employing ZnO as a representative material of ultraviolet photodetectors and Si as a representative material of visible photodetectors, an impact ionization process, in which additional carriers can be generated in an insulating layer at a relatively large electric field, has been employed to increase the responsivity of a semiconductor photodetector. It is found that the responsivity of the photodetectors can be enhanced by tens of times via this impact ionization process. The results reported in this paper provide a general route to enhance the responsivity of a photodetector, thus may represent a step towards high-performance photodetectors.

/pdf/enhanced-responsivity-of-photodetectors-realized-via-impact-5e7xc5lk42.pdf

Enhanced responsivity of photodetectors realized via impact ionization.

The invention provides an atomic layer deposition apparatus employing a uniform air intake system, and relates to atomic layer deposition apparatuses The objective of the invention is to solve the problem of low deposition efficiency in the prior art caused by poor uniformity of contact between a precursor and a substrate or an upper atomic layer, a low utilization rate of reactants and a long growth period of materials The apparatus comprises a reaction chamber, a first precursor container, a second precursor container, an auxiliary sweeping gas container, a first gas supply pipeline, a second gas supply pipeline, an auxiliary sweeping gas supply pipeline, a uniform air intake system, a chamber cover, etc, wherein, the first gas supply pipeline, the second gas supply pipeline and the auxiliary sweeping gas supply pipeline are respectively connected with the first precursor container, the second precursor container and the auxiliary sweeping gas container, the first gas supply pipeline and the second gas supply pipeline respectively communicate with the uniform air intake system in the reaction chamber through the chamber cover of the reaction chamber, and the uniform air intake system is fixed at the lower part of the chamber cover The apparatus meets scientific research and production needs

Atomic layer deposition apparatus employing uniform air intake system

Au/MgO/ZnO/MgO/Au structures have been designed and constructed in this study. Under a bias voltage, a carrier avalanche multiplication will occur via an impact ionization process in the MgO layer. The generated holes will be drifted into the ZnO layer, and recombine radiatively with the electrons in the ZnO layer. Thus obvious emissions at around 387 nm coming from the near-band-edge emission of ZnO will be observed. The reported results demonstrate the ultraviolet (UV) emission realized via a carrier multiplication process, and so may provide an alternative route to efficient UV emissions by bypassing the challenging p-type doping issue of ZnO.

http://iopscience.iop.org/article/10.1088/1674-1056/22/7/077307/pdf

Ultraviolet emissions realized in ZnO via an avalanche multiplication process

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Enhanced responsivity of photodetectors realized via impact ionization.

Atomic layer deposition apparatus employing uniform air intake system

Ultraviolet emissions realized in ZnO via an avalanche multiplication process