Graphene-Like Two-Dimensional Materials

Approaches, Derivatives and Applications Vasilios Georgakilas,† Michal Otyepka,‡ Athanasios B. Bourlinos,‡ Vimlesh Chandra, Namdong Kim, K. Christian Kemp, Pavel Hobza,‡,§,⊥ Radek Zboril,*,‡ and Kwang S. Kim* †Institute of Materials Science, NCSR “Demokritos”, Ag. Paraskevi Attikis, 15310 Athens, Greece ‡Regional Centre of Advanced Technologies and Materials, Department of Physical Chemistry, Faculty of Science, Palacky University Olomouc, 17. listopadu 12, 771 46 Olomouc, Czech Republic Center for Superfunctional Materials, Department of Chemistry, Pohang University of Science and Technology, San 31, Hyojadong, Namgu, Pohang 790-784, Korea Institute of Organic Chemistry and Biochemistry, Academy of Sciences of the Czech Republic, v.v.i., Flemingovo naḿ. 2, 166 10 Prague 6, Czech Republic

Functionalization of Graphene: Covalent and Non-Covalent Approaches, Derivatives and Applications

Graphene has emerged as a subject of enormous scientific interest due to its exceptional electron transport, mechanical properties, and high surface area. When incorporated appropriately, these atomically thin carbon sheets can significantly improve physical properties of host polymers at extremely small loading. We first review production routes to exfoliated graphite with an emphasis on top-down strategies starting from graphite oxide, including advantages and disadvantages of each method. Then solvent- and melt-based strategies to disperse chemically or thermally reduced graphene oxide in polymers are discussed. Analytical techniques for characterizing particle dimensions, surface characteristics, and dispersion in matrix polymers are also introduced. We summarize electrical, thermal, mechanical, and gas barrier properties of the graphene/polymer nanocomposites. We conclude this review listing current challenges associated with processing and scalability of graphene composites and future perspectives f...

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Graphene/Polymer Nanocomposites

Composite Photocatalysts Nan Zhang,†,‡ Min-Quan Yang,†,‡ Siqi Liu,†,‡ Yugang Sun,* and Yi-Jun Xu*,†,‡ †State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fuzhou 350002, P.R. China ‡College of Chemistry, New Campus, Fuzhou University, Fuzhou 350108, P.R. China Center for Nanoscale Materials, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439, United States

Waltzing with the Versatile Platform of Graphene to Synthesize Composite Photocatalysts.

As silicon-based electronics approach the limit of improvements to performance and capacity through dimensional scaling, attention in the semiconductor field has turned to graphene, a single layer of carbon atoms arranged in a honeycomb lattice. Its high mobility of charge carriers (electrons and holes) could lead to its use in the next generation of high-performance devices. Graphene is unlikely to replace silicon completely, however, because of the poor on/off current ratio resulting from its zero bandgap. But it could be used to improve silicon-based devices, in particular in high-speed electronics and optical modulators.

A role for graphene in silicon-based semiconductor devices

Studies of interfacial layers between 4H-SiC (0 0 0 1) and graphene

A novel growth method (carbon molecular beam epitaxy (CMBE)) has been developed to produce high-quality and large-area epitaxial graphene. This method demonstrates significantly improved controllability of the graphene growth. CMBE with C(60) produces AB stacked graphene, while growth with the graphite filament results in non-Bernal stacked graphene layers with a Dirac-like electronic structure, which is similar to graphene grown by thermal decomposition on SiC (000-1).

Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)

We report the formation of band gaps in as-grown stacks of epitaxial graphene with opposite doping. Control of in-situ doping during carbon source molecular beam epitaxy growth on SiC was achieved by using different carbon sources. Doping heterostructures were grown by stacking n-type material from a C60 source on p-type material from a graphite filament source. Activation energies for the resistivity and carrier concentration indicated band gaps up to 200 meV. A photoconductivity threshold was observed in the range of the electrical activation energies. Band gap formation is attributed to electric fields induced by spatially separated ionized dopants of opposite charge.

Band gap formation in graphene by in-situ doping

Abnormal hopping conduction in semiconducting polycrystalline graphene

We report that graphene grown by molecular beam epitaxy from solid carbon (CMBE) on (0001) SiC in the presence of unintentional oxygen exhibits a small bandgap on the order of tens of meV. The presence of bandgaps is confirmed by temperature dependent Hall effect and resistivity measurements. X-ray photoelectron spectroscopy (XPS) measurements suggest that oxygen incorporates into the SiC substrate in the form of O-Si-C and not into the graphene as graphene oxide or some other species. The effect is independent of the carrier type of the graphene. Temperature dependent transport measurements show the presence of hopping conduction in the resistivity and a concurrent disappearance of the Hall voltage. Interactions between the graphene layers and the oxidized substrate are believed to be responsible for the bandgap.

Effect of in-situ oxygen on the electronic properties of graphene grown by carbon molecular beam epitaxy

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