There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

MgCl2 is shown to be a cheap and non-toxic replacement for the costly and environmentally unfriendly salt CdCl2 that has long been used as the ‘activation’ step in the production of cadmium telluride solar cells. Solar cells based on cadmium telluride, CdTe, are among the most cost-efficient photovoltaic systems currently in use. But according to Jonathan Major et al., there is still plenty of room for improvement. Specifically, they show that it is possible to replace the costly and environmentally unfriendly cadmium-containing salt (CdCl2), which has long been used to 'activate' the CdTe during processing, with a cheap and non-toxic alternative, MgCl2. This change does not appear to be detrimental to device performance, yet shows great potential for reducing processing costs and environmental risk. Cadmium telluride, CdTe, is now firmly established as the basis for the market-leading thin-film solar-cell technology. With laboratory efficiencies approaching 20 per cent1, the research and development targets for CdTe are to reduce the cost of power generation further to less than half a US dollar per watt (ref. 2) and to minimize the environmental impact. A central part of the manufacturing process involves doping the polycrystalline thin-film CdTe with CdCl2. This acts to form the photovoltaic junction at the CdTe/CdS interface3,4 and to passivate the grain boundaries5, making it essential in achieving high device efficiencies. However, although such doping has been almost ubiquitous since the development of this processing route over 25 years ago6, CdCl2 has two severe disadvantages; it is both expensive (about 30 cents per gram) and a water-soluble source of toxic cadmium ions, presenting a risk to both operators and the environment during manufacture. Here we demonstrate that solar cells prepared using MgCl2, which is non-toxic and costs less than a cent per gram, have efficiencies (around 13%) identical to those of a CdCl2-processed control group. They have similar hole densities in the active layer (9 × 1014 cm−3) and comparable impurity profiles for Cl and O, these elements being important p-type dopants for CdTe thin films. Contrary to expectation, CdCl2-processed and MgCl2-processed solar cells contain similar concentrations of Mg; this is because of Mg out-diffusion from the soda-lime glass substrates and is not disadvantageous to device performance. However, treatment with other low-cost chlorides such as NaCl, KCl and MnCl2 leads to the introduction of electrically active impurities that do compromise device performance. Our results demonstrate that CdCl2 may simply be replaced directly with MgCl2 in the existing fabrication process, thus both minimizing the environmental risk and reducing the cost of CdTe solar-cell production.

A low-cost non-toxic post-growth activation step for CdTe solar cells

An 800 nm CdSeTe layer was added to the CdTe absorber used in high-efficiency CdTe cells to increase the current and produce an increase in efficiency. The CdSeTe layer employed had a band-gap near 1.41 eV, compared with 1.5 eV for CdTe. This lower band-gap enabled a current density increase from approximately 26 to over 28 mA/cm2. The open-circuit voltage obtained in the high-efficiency CdTe-only device was maintained and the fill-factor remained close to 80%. Improving the short-circuit current density and maintaining the open-circuit voltage lead to device efficiency over 19%. External quantum efficiency implied that about half the current was generated in the CdSeTe layer and half in the CdTe. Cross-sectional STEM and EDS showed good grain structure throughout. Diffusion of Se into the CdTe layer was observed. This is the highest efficiency polycrystalline CdTe photovoltaic device demonstrated by a university or national laboratory.

/pdf/polycrystalline-cdsete-cdte-absorber-cells-with-28-ma-cm-2-fmnogyautz.pdf

Polycrystalline CdSeTe/CdTe Absorber Cells With 28 mA/cm 2 Short-Circuit Current

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

https://www.mdpi.com/1996-1073/14/6/1684/pdf

CdTe-Based Thin Film Solar Cells: Past, Present and Future

Photovoltaic technologies have shown efficiencies of over 40%, however, manufacturing costs have prevented a more significant energy market penetration. To bridge the gap between the high efficiency technology and low cost manufacturing, a research and development tool and process was built and tested. This fully automated single vacuum photovoltaic manufacturing tool utilizes multiple inline close space sublimation (CSS) sources with automated substrate control. This maintains the proven scalability of the CSS technology and CSS source design but with the added versatility of independent substrate motion. This combination of a scalable deposition technology with increased cell fabrication flexibility has allowed for high efficiency cells to be manufactured and studied. The single vacuum system is capable of fabricating a 3.1 × 3.6 in. substrate every 45 min with a cell efficiency of 12% with a standard deviation of 0.6% as measured over 36 months. The substrate is generally scribed into 25 small area devices allowing for over 250 small area devices to be fabricated each day. The system can operate uninterrupted for maintenance for over 21 days.

Single vacuum chamber with multiple close space sublimation sources to fabricate CdTe solar cells

The addition of a CdMgTe (CMT) layer at the back of a CdTe solar cell should improve its performance by reflecting both photoelectrons and forward-current electrons away from the rear surface. Higher collection of photoelectrons will increase the cell’s current, and reduction of forward current will increase its voltage. To achieve electron reflection, conformal CMT layers were deposited at the back of CdTe cells, and a variety of measurements including performance curves, transmission electron microscopy, x-ray photoelectron spectroscopy, and energy-dispersive x-ray spectroscopy were performed. Oxidation of magnesium in the CMT layer was addressed by adding a CdTe capping layer. MgCl2 passivation was substituted for CdCl2 in some cases, but little difference was seen.

Incorporation of Cd1-xMgx Te as an Electron Reflector for Cadmium Telluride Photovoltaic Cells

Zinc telluride (ZnTe) films have been deposited onto uncoated glass superstrates by reactive radiofrequency (RF) sputtering with different amounts of nitrogen introduced into the process gas, and the structural and electronic transport properties of the resulting nitrogen-doped ZnTe (ZnTe:N) films characterized. Based on transmission and x-ray diffraction measurements, it was observed that the crystalline quality of the ZnTe:N films decreased with increasing nitrogen in the deposition process. The bulk carrier concentration of the ZnTe:N films determined from Hall-effect measurements showed a slight decrease at 4% nitrogen flow rate. The effect of ZnTe:N films as back contact to cadmium telluride (CdTe) solar cells was also investigated. ZnTe:N films were deposited before or after CdCl2 passivation on CdTe/CdS samples. Small-area devices were characterized for their electronic properties. Glancing-angle x-ray diffraction measurements and energy-dispersive spectroscopy analysis confirmed substantial loss of zinc from the samples where CdCl2 passivation was carried out after ZnTe:N film deposition.

Properties of Nitrogen-Doped Zinc Telluride Films for Back Contact to Cadmium Telluride Photovoltaics

Thin-film cadmium telluride (CdTe) solar cells with an absorber thickness range of 0.4–1.2 μm were fabricated by close-space sublimation on a transparent MgZnO window layer. Microscopy cross sections showed that a significant fraction of the CdTe crystallites extended throughout the absorber layer, and capacitance measurements demonstrated that the absorbers were depleted into forward bias. Current and fill factor loss analyses were used to identify dominant loss mechanisms in the devices as a function of absorber thickness, and photoluminescence measurements were increasingly influenced by back-surface recombination as the absorber was made thinner. The thinner CdTe devices showed modest current and fill-factor reduction but overall good diode quality, and the highest efficiency of 15% was achieved with 1.2-μm CdTe.

Performance Analysis of 0.4–1.2-μm CdTe Solar Cells

Thin CdTe photovoltaic device efficiencies show significant improvement with the incorporation of a CdSeTe alloy layer deposited between a MgZnO emitter and CdTe absorber. CdTe and CdSeTe/CdTe devices fabricated by close-space sublimation with a total absorber thickness of 1.5 µm are studied using microscopy measurements and show minimal diffusion of Se into the CdTe. Current loss analysis shows that the CdSeTe layer is the primary absorber in the CdSeTe/CdTe structure, and fill factor loss analysis shows that ideality-factor reduction is the dominant mechanism of fill factor loss. Improvement in the CdSeTe/CdTe absorber quality compared to CdTe is also reflected in spectral and time-resolved photoluminescence measurements. Current density vs. voltage measurements show an increase in current density of up to 2 mA/cm2 with the addition of CdSeTe due to a band gap shift from 1.5 to 1.42 eV for CdTe and CdSeTe/CdTe absorbers respectively. Voltage deficit is lower with the incorporation of the CdSeTe layer, corroborated by improved electroluminescence intensity. The addition of CdSeTe into CdTe device structures has increased device efficiencies from 14.7% to 15.6% for absorbers with a total thickness less than two microns.

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/D9ECC0A01D6865B27D7721697C0DE29A/S2059852119003323a.pdf/div-class-title-characterization-of-thin-cdte-solar-cells-with-a-cdsete-front-layer-div.pdf

Characterization of thin CdTe solar cells with a CdSeTe front layer

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