In this study, indium tin oxide (ITO) was deposited onto sapphire and low resistive p-Si substrates using pulsed laser deposition (PLD) technique. The optical energy gap of ITO deposited on the sap...

Photovoltaic properties of ITO/p-Si heterojunction prepared by pulsed laser deposition

Crystalline NiO and doped with rare earth lutetium oxide (Lu2O3) at (6%wt)., have been prepared by pulsed laser deposition (PLD), The Q-switched Nd:YAG laser beam was incident at an angle of 45° on the target surface, and the energy of the laser was 500 mJ, wavelengths of 532nm, and frequency 6Hz. XRD pattern shows all doped and undoped films are polycrystalline, and cubic structure. The 200nm thin NiO showed an average optical energy band gap of 3.4eV, and increase with doping at 6% Lu2O3. The Hall Effect measurements confirmed that holes were predominant charges in the conduction process (i.e p-type). D.C conductivity measurements with temp-erature (T), show that the films prepared have the two activation energy increase with doping of Lu2O3. Capacitance-voltage (C-V) measurements were performed for films prepared, where the built in voltage has been determined and decreases in value when doping with the rare earth. In this study we assumed an energy band diagram for p-NiO /n-Si heterojunction.

Energy Band Diagram of NiO: Lu2 O3/n-Si heterojunction

NiO thin films have compounded by pulsed laser deposition on glass and silicon (111) substrates, employing Q-switching Nd:YAG laser. Structure, grain size and optical properties have analyzed by using FTIR, AFM and UV-VIS spectroscopy. FTIR spectra conformed of NiO bonding. AFM images show the particle size about ~66nm. The optical transmission results premiered the transparency of the NiO films is greater than 70% in the visible region with optical band gap 3.85eV. The current voltage characterization of NiO/Si heterojunction has good rectifying.

Nanostructure NiO films prepared by PLD and their optoelectronic properties

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Nanostructure NiO films prepared by PLD and their optoelectronic properties