Jeevesh Kumar
Indian Institute of Science
39 Papers
82 Citations
Jeevesh Kumar is an academic researcher from Indian Institute of Science. The author has contributed to research in topics: Phosphorene & Vacancy defect. The author has an hindex of 5, co-authored 18 publications.
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Papers
Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By ${\mathrm{Al}}_{x}{\mathrm{Ti}}_{1-x}$ O Based Gate Stack Engineering
Sayak Dutta Gupta,Ankit Soni,Vipin Joshi,Jeevesh Kumar,Rudrarup Sengupta,Heena Khand,Bhawani Shankar,Nagaboopathy Mohan,Srinivasan Raghavan,Navakanta Bhat,Mayank Shrivastava +10 more
TL;DR: In this article, the authors have experimentally demonstrated enhancement mode (e-mode) AlGaN/GaN high-electron-mobility transistor (HEMT) operation by integrating p-type high-kappa Ω(kappa ) based gate stack.
40
Stone-Wales Defect and Vacancy-Assisted Enhanced Atomic Orbital Interactions Between Graphene and Ambient Gases: A First-Principles Insight.
Jeevesh Kumar,Ansh,Mayank Shrivastava +2 more
- 25 Nov 2020
TL;DR: It is observed that while the pristine graphene is chemically and physically inert with ambient gases, except for oxygen, its interaction with these ambient gases increases significantly in the presence of carbon vacancies and Stone–Wales (SW) defects.
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Chalcogen Assisted Enhanced Atomic Orbital Interaction at TMDs - Metal Interface & Chalcogen Passivation of TMD Channel For Overall Performance Boost of 2D TMD FETs
Ansh,Jeevesh Kumar,Gaurav Sheoran,Harsha B. Variar,Ravi K. Mishra,Hemanjaneyulu Kuruva,Adil Meersha,Abhishek Mishra,Srinivasan Raghavan,Mayank Shrivastava +9 more
TL;DR: In this paper, a universal approach involving dry chemistry to enhance atomic orbital interaction between various TMDs (MoS2, WS2, MoSe2 and WSe2) and metal contacts has been experimentally demonstrated.
Selective Electron or Hole Conduction in Tungsten Diselenide (WSe 2 ) Field-Effect Transistors by Sulfur-Assisted Metal-Induced Gap State Engineering
TL;DR: In this paper, the authors proposed a new technique by engineering WSe2/metal interface to realize high-performance p-and n-channel transistors and therefore unveil its potential toward CMOS-integrated technology.
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MoS 2 Doping Using Potassium Iodide for Reliable Contacts and Efficient FET Operation
TL;DR: In this paper, a few-layer MoS2 doping using potassium iodide (KI) solution to realize stable/reliable ohmic contacts and achieve efficient electron transport was demonstrated.
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