Jean-Michel Hartmann
University of Grenoble
118 Papers
378 Citations
Jean-Michel Hartmann is an academic researcher from University of Grenoble. The author has contributed to research in topics: Silicon & Germanium. The author has an hindex of 23, co-authored 118 publications. Previous affiliations of Jean-Michel Hartmann include Commissariat à l'énergie atomique et aux énergies alternatives & Centre national de la recherche scientifique.
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Papers
Technological advances on Si and Si3N4 low-loss waveguide platforms for nonlinear and quantum optics applications
Cyril Bellegarde,Houssein El Dirani,Xavier Letartre,Camille Petit-Etienne,Christelle Monat,Jean-Michel Hartmann,Corrado Sciancalepore,Erwine Pargon +7 more
- 04 Mar 2019
TL;DR: In this article, the authors report on the design, fabrication, and testing of silicon-on-insulator (SOI) and silicon-nitrideon- insulator (SiNOI) photonic circuits for nonlinear and quantum optics applications.
Ultra-High Boron Doping of Si and Ge for Nanoelectronics and Photonics
Jean-Michel Hartmann,Marvin Frauenrath,Jérôme Richy,Marc Veillerot +3 more
- 08 Sep 2020
TL;DR: In this article, the in-situ boron-doping of Si and Ge with Si2H6 + B 2H6 and Ge2B + B2H 6 was explored, where X-ray Diffraction was used to convert the tensile strain in Si:B or Ge:B layers into substitutional B concentrations.
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Ultra Low-Loss Silicon Waveguides for 200 mm Photonics Platform
Cyril Bellegarde,Stephane Bernabe,S. Brision,Benoit Charbonnier,Daivid Fowler,Stephanie Garcia,Philippe Grosse,Jean-Michel Hartmann,Andre Myko,Erwine Pargon,Camille Petit-Etienne,Karen Ribaud,Corrado Sciancalepore,Bertrand Szelag,Quentin Wilmart,Laurene Youssef +15 more
- 01 Aug 2019
TL;DR: In this paper, the authors demonstrate ultra-low optical losses in silicon waveguide by applying a smoothing annealing with no morphological deformation and reach record low losses at 1310nm with 0.1 dB/cm in single mode waveguide, while the performances of the other devices of the platform are preserved.
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Atomistic predictions of substrate orientation impact during SiGe alloys solid phase epitaxial regrowth
Anthony Payet,Benoit Sklenard,Jean-Charles Barbe,Perrine Batude,Christophe Licitra,A.M. Papon,Jean-Michel Hartmann,Roberto Gonella,Patrice Gergaud,Ignacio Martin-Bragado +9 more
- 01 Sep 2016
TL;DR: In this paper, the effects of substrate orientation and germanium concentration during silicon-germanium Solid Phase Epitaxial Regrowth (SPER) were analyzed through lattice kinetic Monte Carlo simulations.
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Epitaxy and photoluminescence studies of high quality GeSn heterostructures with Sn concentrations up to 13 at.
Stephan Wirths,R. Geiger,Zoran Ikonic,A. T. Tiedemann,Gregor Mussler,Jean-Michel Hartmann,Siegfried Mantl,Hans Sigg,Detlev Grützmacher,Dan Buca +9 more
- 24 Nov 2014
TL;DR: In this paper, photoluminescence measurements on highly compressively strained and partially relaxed GeSn alloys with Sn contents up to 13 at.% were performed on both partially relaxed and moderately doped Ge0.88Sn0.12.