Jean-Michel Gérard
University of Grenoble
427 Papers
2.4K Citations
Jean-Michel Gérard is an academic researcher from University of Grenoble. The author has contributed to research in topics: Quantum dot & Photoluminescence. The author has an hindex of 58, co-authored 421 publications. Previous affiliations of Jean-Michel Gérard include Commissariat à l'énergie atomique et aux énergies alternatives & French Alternative Energies and Atomic Energy Commission.
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Papers
Quantum-mechanical versus semiclassical capture and transport properties in quantum well laser structures
TL;DR: In this article, the capture properties and transport mechanisms of electrons and holes in laser structures were modelled theoretically and the capture time with the well width were observed. But the authors only considered the extreme case where the barrier thickness is very large and quantum-mechanical effects at the edge of the well are negligible.
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How to avoid non-radiative escape of excitons from quantum dots?
I. C. Robin,Régis André,Le Si Dang,Henri Mariette,Serge Tatarenko,Jean-Michel Gérard,Kuntheak Kheng,F. Tinjod,M. Bartels,Klaus Lischka,D. Schikora +10 more
TL;DR: In this article, the authors investigated the transition between two different exciton recombination regimes in quantum dots depending on temperature and found that the maximum temperature for dominant radiative recombination scales linearly with the activation energy of non-radiative channels over a large range of values.
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Semiconductor microcavities, quantum boxes and the Purcell effect
Jean-Michel Gérard,Bruno Gayral +1 more
TL;DR: In this article, the spontaneous emission rate of self-assembled InAs/GaAs quantum boxes inserted in GaAs-based pillar microcavities or microdisks is investigated.
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Strained InGaAs quantum well vertical cavity surface emitting lasers emitting at 1.3 [micro sign]m
E. Pougeoise,Philippe Gilet,Philippe Grosse,S. Poncet,A. Chelnokov,Jean-Michel Gérard,G. Bourgeois,R. Stevens,Regis Hamelin,Mattias Hammar,Jesper Berggren,Petrus Sundgren +11 more
TL;DR: In this paper, the metal-organic vapour-phase epitaxy grown structure was processed as top p-type distribute Bragg reflector oxide-confined devices for optical interconnection applications.
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Patent
Structure for an optoelectronical device including micropillar like semi-conductors and corresponding processes.
Sven Höfling,Julien Claudon,Alfred Forchel,Jean-Michel Gérard,Philppe Gilet,Laurent Grenouillet,Stephan Reitzenstein +6 more
- 22 Oct 2007
TL;DR: In this paper, a structure for an optoelectronical device including at least one micropillar-like semi-conductor and having an electrical contact area on the periphery of the said at least single micropilar, located close to a free end of the free end, the said free end being not involved in the electrical contact.
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