SmN is a ferromagnetic semiconductor with the unusual property of an orbital-dominant magnetic moment that is largely cancelled by an antiparallel spin contribution, resulting in a near-zero net moment. However, there is a basic gap in the understanding of the ferromagnetic ground state, with existing density functional theory calculations providing values of the $4f$ magnetic moments at odds with experimental data. To clarify the situation, we employ an effective $4f$ Hamiltonian incorporating spin-orbit coupling, exchange, the crystal field, and $J$-mixing to calculate the ground state $4f$ moments. Our results are in excellent agreement with experimental data, revealing moderate quenching of both spin and orbital moments to magnitudes of $\sim 2~\mu_B$ in bulk SmN, enhanced to an average of $\sim 3~\mu_B$ in SmN layers within a SmN/GdN superlattice. These calculations provide insight into recent studies of SmN showing that it is an unconventional superconductor at low temperatures and displays twisted magnetization phases in magnetic heterostructures.

On the ferromagnetic ground state of SmN

High magnetizations are desirable for spintronic devices that operate by manipulating electronic states using built-in magnetic fields. However, the magnetic moment in promising dilute magnetic oxide nanocomposites is very low, typically corresponding to only fractions of a Bohr magneton for each dopant atom. In this study, we report a large magnetization formed by ion implantation of Co into amorphous TiO2−δ films, producing an inhomogeneous magnetic moment, with certain regions producing over 2.5 μB per Co, depending on the local dopant concentration. Polarized neutron reflectometry was used to depth-profile the magnetization in the Co:TiO2−δ nanocomposites, thus confirming the pivotal role of the cobalt dopant profile inside the titania layer. X-ray photoemission spectra demonstrate the dominant electronic state of the implanted species is Co0, with a minor fraction of Co2+. The detected magnetizations have seldom been reported before and lie near the upper limit set by Hund’s rules for Co0, which is u...

/pdf/enhanced-magnetization-of-cobalt-defect-clusters-embedded-in-opnkurwx2z.pdf

Enhanced Magnetization of Cobalt Defect Clusters Embedded in TiO2−δ Films

We report for the first time the synthesis of nanopowders of TbN, DyN and HoN crystallized in a cubic structure by the plasma arc discharge (PAD) method and investigate their magnetocaloric properties for magnetic refrigeration applications. The nitridization of terbium, dysprosium and holmium was obtained using a mixture of nitrogen and argon gas inside a discharge chamber with 4 kPa pressure. The structural and microstructural properties of these rare earth nitrides were investigated by using X-ray diffraction and transmission electron microscopy. The studied nitrides undergo a second-order ferromagnetic to paramagnetic phase transition at Curie temperatures of 35.7, 19.9 and 14.2 K for TbN, DyN and HoN, respectively. The magnetocaloric effects were estimated by calculating the magnetic entropy changes from the magnetization data sets measured at the different applied magnetic fields and temperatures. The changes in entropy -ΔSM were found to be 12.0, 13.6 and 24.5 J kg(-1) K(-1) at an applied magnetic field of 5 T.

Magnetocaloric properties of TbN, DyN and HoN nanopowders prepared by the plasma arc discharge method.

Acta Crystallographica B, Cに投稿される方へ

Using modern thin film growth techniques, and performing structural, magnetic, optical and electrical transport measurements on YbN thin films, the authors show that these films are antiferromagnetic and semiconducting, unlike other rare-earth nitrides that are either para- or ferromagnetic.

YbN: An intrinsic semiconductor with antiferromagnetic exchange

Polarized neutron reflectometry and x-ray reflectometry were used to determine the nanoscale magnetic and chemical depth profiles of the heavy rare-earth nitrides HoN, ErN, and DyN in the form of 15- to 40-nm-thick films. The net ferromagnetic components are much lower than the predictions of density-functional theory and Hund's rules for a simple ferromagnetic ground state in these $4f$ ionic materials, which points to the intrinsic contribution of crystal-field effects and noncollinear spin structures. The magnetic moment per rare-earth ion was determined as a function of temperature in the range 5--100 K at fields of 1--4 T. It is demonstrated that the films are stoichiometric within 1--3% and magnetically homogeneous on the nanometer scale.

/pdf/intrinsic-reduction-of-the-ordered-4-f-magnetic-moments-in-4nacoxcnes.pdf

Intrinsic reduction of the ordered 4 f magnetic moments in semiconducting rare-earth nitride thin films : DyN, ErN, and HoN

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Intrinsic reduction of the ordered 4 f magnetic moments in semiconducting rare-earth nitride thin films : DyN, ErN, and HoN