James S. Harris
Stanford University
1152 Papers
11.1K Citations
James S. Harris is an academic researcher from Stanford University. The author has contributed to research in topics: Quantum well & Molecular beam epitaxy. The author has an hindex of 80, co-authored 1152 publications. Previous affiliations of James S. Harris include Electronics Research Center & Rockwell International.
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Papers
O 2 -Enhanced surface treatment of Ge epitaxially grown on Si for heterogeneous Ge technology
Xiaochi Chen,Yijie Huo,James S. Harris,Seongjae Cho,Byung-Gook Park +4 more
- 22 Jun 2014
TL;DR: The O2-annealed sample showed the highest PL signals regardless of growth techniques, which supports that an ex-situ RTA in the O2 ambient would be an effective technique for surface treatment of Ge in the fabrication processes of Ge-based electronic and photonic devices.
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Luminescent coupling effects in double-junction solar cells
Mojgan Mazouchi,Jieyang Jia,Yijie Huo,Yu Miao,Yangsen Kang,Yusi Chen,James S. Harris,Mitra Dutta +7 more
- 14 Jun 2015
TL;DR: In this article, the authors presented an analytical model which predicts a voltage enhancement in photocurrent-matched double-junction cells due to luminescent coupling between the two junctions.
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Applications of High Indium Content InGaAs/AlGaAs Quantum Wells in the 2–7 μm Regime
E. L. Martinet,B. J. Vartanian,G. L. Woods,H. C. Chui,James S. Harris,Martin M. Fejer,Bruce A. Richman,C. A. Rella +7 more
- 01 Jan 1994
TL;DR: In this paper, the authors report on some applications of high indium content quantum wells for mid-infrared (2-7μm) applications. But their work is limited to the conduction band near 5.5 μm.
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A novel measurement method of luminescence coupling in multijunction solar cells based on small signal method
TL;DR: In this article, the authors measured the luminescent coupling efficiency of a multijunction solar cell with different voltage bias, and demonstrated the light and voltage dependence of the coupling efficiency.
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Large Energy Intersubband Transitions in High Indium Content InGaAs / AlGaAs Quantum Wells
H. C. Chui,E. L. Martinet,Martin M. Fejer,James S. Harris +3 more
- 01 Jan 1994
TL;DR: By growing high indium content InGaAs / AlGaAs quantum wells (QWs) on GaAs substrates with linearly graded In-GaAs buffers, the authors in this paper demonstrated peak intersubband absorption energies as high as 580meV (2.1μm wavelength).
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