James S. Dunn

TL;DR: In this article, a method of fabricating reliable metal oxide semiconductor (MOS) devices with little or no oxide breakdown at the Rx edge during device biasing is presented. But the improved reliability is obtained by forming a contact to the polysilicon top conductor over a substantially thicker portion of the dielectric region.

TL;DR: In this paper, a method of forming a semiconductor integrated circuit such as a BiCMOS integrated circuit comprises the steps of: (a) forming a first portion of a bipolar device in a first region of a substrate; (b) forming the first protective layer over the first region to protect the first part of the bipolar devices; (c) forming field effect transistor devices in second regions of the substrate; and (d) forming an additional layer covering the second part of bipolar devices.

TL;DR: In this article, a method of forming a BiCMOS integrated circuit is described, which comprises the steps of: (a) forming a first portion of a bipolar device in first regions of a substrate; (b) forming the first protective layer over said first regions to protect said first portions of said bipolar devices; (c) forming field effect transistor devices in second regions of said substrate; and (d) form a second protective layer on the second region of the substrate.

TL;DR: In this paper, a system, method and program product that allows multiple devices to be placed between chip pads such that a Back End Of Line (BEOL) mask change can be used to select different device options is described.