James Mckell Edwin Harper

TL;DR: In this paper, a broad and brief review of the question of intrinsic stresses in films deposited via evaporation and sputtering is provided, with a sufficient number of references, and some attention is paid to a third model where compressive stresses could result from impurity adsorption not at the top surface of the growing films, but one monolayer below.

TL;DR: In this paper, the authors describe the materials, processes, and reliability issues in the development of multi-level Cu chip interconnections and show that four-level polyimide structures have been fabricated by using a damascene process which maintains planarity at each level.

TL;DR: In this paper, a method of planarizing a layer of a workpiece such as a semiconductor wafer includes rotating the layer against an electrolytic polishing slurry, and flowing an electrical current through the slurry and through only one major side and/or minor sides of the layer, to remove portions of a layer.

TL;DR: The development of broad-beam ion source technology described in the companion paper (Part I) has stimulated a rapid expansion in applications to materials processing such as microfabrication and reactive ion beam etching.