Synthesis of monodisperse iron-platinum (FePt) nanoparticles by reduction of platinum acetylacetonate and decomposition of iron pentacarbonyl in the presence of oleic acid and oleyl amine stabilizers is reported. The FePt particle composition is readily controlled, and the size is tunable from 3- to 10-nanometer diameter with a standard deviation of less than 5%. These nanoparticles self-assemble into three-dimensional superlattices. Thermal annealing converts the internal particle structure from a chemically disordered face-centered cubic phase to the chemically ordered face-centered tetragonal phase and transforms the nanoparticle superlattices into ferromagnetic nanocrystal assemblies. These assemblies are chemically and mechanically robust and can support high-density magnetization reversal transitions.

/pdf/monodisperse-fept-nanoparticles-and-ferromagnetic-fept-12j5xql32h.pdf

Monodisperse FePt Nanoparticles and Ferromagnetic FePt Nanocrystal Superlattices

Hexagonal ferrites: A review of the synthesis, properties and applications of hexaferrite ceramics

We show a simple, robust, chemical route to the fabrication of ultrahigh-density arrays of nanopores with high aspect ratios using the equilibrium self-assembled morphology of asymmetric diblock copolymers. The dimensions and lateral density of the array are determined by segmental interactions and the copolymer molecular weight. Through direct current electrodeposition, we fabricated vertical arrays of nanowires with densities in excess of 1.9 x 10(11) wires per square centimeter. We found markedly enhanced coercivities with ferromagnetic cobalt nanowires that point toward a route to ultrahigh-density storage media. The copolymer approach described is practical, parallel, compatible with current lithographic processes, and amenable to multilayered device fabrication.

/pdf/ultrahigh-density-nanowire-arrays-grown-in-self-assembled-1mgxshd8uu.pdf

Ultrahigh-Density Nanowire Arrays Grown in Self-Assembled Diblock Copolymer Templates

Using thin film pillars $\ensuremath{\sim}100\mathrm{nm}$ in diameter, containing two Co layers of different thicknesses separated by a Cu spacer, we examine the process by which the scattering from the ferromagnetic layers of spin-polarized currents flowing perpendicular to the layers causes controlled reversal of the moment direction in the thin Co layer. The well-defined geometry permits a quantitative analysis of this spin-transfer effect, allowing tests of competing theories for the mechanism and also new insight concerning magnetic damping. When large magnetic fields are applied, the spin-polarized current no longer fully reverses the magnetic moment, but instead stimulates spin-wave excitations.

pdf/current-driven-magnetization-reversal-and-spin-wave-3i1cjg2k6i.pdf

Current-driven magnetization reversal and spin-wave excitations in Co /Cu /Co pillars

http://files.janapv.webnode.cz/200000097-8a03f8afdf/ex_bias_nano.pdf

Exchange bias in nanostructures

A series of sputtered multilayers of Ni80Fe20-Ag was prepared to examine the giant magnetoresistance effect before and after annealing. For a wide range of NiFe and Ag thicknesses, no giant magnetoresistance was observed in the unannealed films. After annealing, a large, negative magnetoresistance was observed of order 4 to 6% in applied fields of order 5 to 10 oersteds at room temperature. The appearance of giant managetoresistance is concurrent with the breakup of the NiFe layers, which is attributable to a magnetostatic interaction that favors local antiparallel alignment of the moments in adjacent layers. These structures may be of significant practical importance as sensors that require large changes in resistance at low fields, such as magnetoresistive heads used in magnetic recording systems.

https://science.sciencemag.org/content/sci/261/5124/1021.full.pdf

Giant magnetoresistance at low fields in discontinuous NiFe-Ag multilayer thin films

Ba‐ferrite is an attractive candidate for future high‐density recording media because of its large coercivity, corrosion resistance, high hardness, and durability. In contrast to most recent work on Ba‐ferrite thin film media, polycrystalline films with large in‐plane remanence for longitudinal recording are emphasized. Films are prepared on a variety of substrates by on‐axis sputtering at low temperatures from stoichiometric targets followed by a postdeposition anneal in a rapid thermal processor at ∼850 °C to induce crystallization. Structural and chemical properties have been investigated by force microscopy, Rutherford backscattering, and other means. Stoichiometric films have large 5000 A grains that are unsuitable for high‐density recording. However, grain sizes as small as 200 A have been produced by doping with small amounts of Cr2O3 and other additives. Compositional changes also influence crystallite orientation. Exceptional durability has been observed on disks without overcoats, presumably due...

Ba‐ferrite thin‐film media for high‐density longitudinal recording (invited)

A suitable substrate is provided to which is applied a metal electrically conductive film electrode. The substrate and electrically conductive electrode film are then exposed to ion beam implantation of O+ or N+ ions to impregnate the surface of the metal electrode with O+ or N+ ions. Thereafter, the substrate and electrically conductive film having implanted O+ or N+ ions is annealed so as to stabilize the oxide structure which has been implanted into the surface of the electrically conductive film to provide an ultra-thin dielectric film.

Method for manufacture of ultra-thin film capacitor

A magnetoresistive (MR) read transducer comprising a thin film MR layer formed of ferromagnetic material and a nonmagnetic thin film spacer layer in contact with the MR layer. The spacer layer comprises a material selected from the group consisting of nichrome and nichrome with chromium oxide. A thin film of soft magnetic material is deposited in contact with the spacer layer so that a transverse bias is produced in at least a part of the MR layer. A feature of the invention is that the resistivity of the spacer layer can be chosen by selected the ration of nichrome to chromium oxide in the spacer layer. In a specific embodiment the spacer layer extends over only the central region of the MR layer. In case the MR layer is a nickel based alloy, a wet chemical etching process using an etchant comprising an aqueous solution of ceric ammonium nitrate and acetic acid can be used pattern the spacer layer.

Magnetoresistive read transducer

Intermetallic coumpound formation at metal–metal interfaces was observed for thin film couples of Al and transition metals such as Cr, Ti, Hf, Zr, Co, Ta, Pd, and Pt. The Al–Cr system was investigated in some detail using a conductance method and nuclear backscattering for reaction‐rate measurements. The compounds CrAl7 and Cr2Al11 were identified and their growth was found to be diffusion controlled. The temperature dependence of the rate constant for CrAl7 obeyed an Arrhenius plot from 300° to 450 °C with an activation energy of 1.91±0.1 eV. The Al‐rich phases of the remaining transition metals were investigated; the compounds either exhibited a planar interface with parabolic growth kinetics or an irregular interface with nonparabolic growth. An empirical relationship involving the melting point and stability of the compounds was proposed to explain the different growth kinetics.

Kinetics of compound formation in thin film couples of Al and transition metals

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