Cr-doped and undoped β-FeSi2 thin films were deposited on (001) and (111) Si substrates by molecular beam epitaxy. Single crystals were grown by the chemical vapor transport technique. In thin films we found a significant substrate influence on the Hall voltage at room temperature which was strongly reduced at lower temperatures. In Cr-doped samples a transition between defect-band conduction and valence-band conduction was observed in the temperature range 50–100 K. The behavior of the mobility curves μ(T) suggests that defect-band conduction dominates up to near room temperature in nominally undoped thin films. Below a sample-dependent temperature, being not higher than 150 K, often a nonlinear dependence of the Hall effect on the magnetic field was found, sometimes accompanied by pronounced hysteresis behavior. It is shown that this behavior is rather related to microinhomogeneities than to a magnetic phase transition.

Hall effect and resistivity of β-FeSi2 thin films and single crystals

Deep level transient spectroscopy is used to study the segregation of Fe from crystalline Si to an Al:Si liquid at its surface, which is the basic mechanism of aluminum gettering used in silicon photovoltaics. The measured segregation coefficient is smaller than estimates from the binary Fe:Si and Al:Fe phase diagrams. This apparent discrepancy originates from the ternary character of the system where the solubility of Fe in Si in equilibrium with the Al-doped α-FeSi2 has to be taken as a reference. Our data suggest that this solubility exceeds that in the binary Fe:Si system by two orders of magnitude.

Aluminum gettering of iron in silicon as a problem of the ternary phase diagram

Anomalous hall effect in beta -fesi2

The Mossbauer spectrum of consists of four lines originating from two quadrupole doublets corresponding to two different local environments of iron. Measurements in external magnetic fields, and numerical analysis support the idea that the first and third lines belong to a doublet. This doublet has a negative quadrupole splitting while the other two lines form a doublet with a positive quadrupole splitting. The model of two doublets and randomness of the electric field gradient tensor axes fails at fields larger than about 6 T. The quadrupole splittings as well as the effective internal field show non-trivial linear variation with the intensity of the external magnetic field.

Hyperfine structure of

We have investigated the potential of solution-processed β-phase iron disilicide (FeSi2) nanoparticles as a novel semiconducting material for photovoltaic applications. Combined ultraviolet-visible absorption and photothermal deflection spectroscopy measurements have revealed a direct band gap of 0.85 eV and, therefore, a particularly high absorption in the near infrared. With the help of Fourier-transform infrared and X-ray photoelectron spectroscopy, we have observed that exposure to air primarily leads to the formation of a silicon oxide rather than iron oxide. Mossbauer measurements have confirmed that the nanoparticles possess a phase purity of more than 99%. To diminish the small fraction of metallic iron impurities, which were detected by superconducting quantum interference device magnetometry and which would act as unwanted Auger recombination centers, we present a novel concept to magnetically separate the FeSi2 nanoparticles (NPs). This process leads to a reduction of more than 95% of the iron impurities.

Separation of semiconducting and ferromagnetic FeSi2-nanoparticles by magnetic filtering

Results of X-ray diffraction, magnetic susceptibility and Mossbauer measurements are presented for FeSi 2− x Al x with x = 0 up to 0.06. Almost pure β-FeSi 2 was obtained with crystallite size 1–10 μm and with traces of the FeSi phase. The FeSi phase is created in the initial stage of crystallization in the form of dendrites. The α-FeSi 2 phase was not detected in the annealed alloy with x = 0. Substitution of Si by Al causes appearance of the α-FeSi 2 phase which is visible particularly clear as an additional component in Mossbauer spectra. A large maximum of the low temperature susceptibility was observed between x = 0 and x = 0.040. The maximum is interpreted as the result of the enhancement of the susceptibility in the β-FeSi 2 phase doped with Al.

Magnetic and Mössbauer investigation of FeSi2−xAlx

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Magnetic and Mössbauer investigation of FeSi2−xAlx