Atomic layer deposition(ALD) of amorphous TiN films on SiO2 between 170°C and 210°C has been investigated by alternate supply of reactant sources, Ti[N(C2H5CH3)2]4 [tetrakis(ethylmethylamino)titanium: TEMAT] and NH3. Reactant sources were injected into the reactor in the order of TEMAT vapor pulse, Ar gas pulse, NH3 gas pulse and Ar gas pulse. Film thickness per cycle was saturated at around 0.5 nrm/cycle with sufficient pulse time of TEMAT at 200°C. The ideal linear relationship between number of cycles and film thickness is confirmed. As a result of surface limited reactions of ALD, step coverage was excellent. Particles caused by the gas phase reactions between TEMAT and NH3 were almost free because TEMAT was separated from NH3 by the Ar pulse. In spite of relatively low substrate temperature, carbon impurity was incorporated below 4at%.

Atomic Layer Deposition of Tin Thin Films by Sequential Introduction of Ti Precursor and NH3

The gas-phase kinetics of the reaction of tetrakis(dimethylamido)titanium (Ti(NMe2)4) with NH3 have been measured using a flow tube reactor and FTIR spectrometer. Ti(NMe2)4 reacts rapidly with NH3 in a transamination reaction to form HNMe2 as a direct product. The bimolecular rate constant for the reaction of Ti(NMe2)4 with NH3 at 24 °C is k = (1.2 ± 0.2) × 10-16 cm3 molecules-1 s-1. A primary kinetic isotope effect of kH/kD = 2.6 ± 0.4 is observed with ND3 indicating that cleavage of an N−H bond is the rate limiting step. Therefore the rate constant is assigned to the initial transamination reaction with NH3. The temperature dependence of the rate constant gives activation parameters of log(&#x1d49c;) = −10.0 ± 0.2 (ΔS† = −19 cal/(mol K)) and Ea = 8.1 ± 0.1 kcal/mol (ΔH† = 6.9 ± 0.1 kcal/mol). When excess HNMe2 is added to the gas flow, the reaction rate is strongly suppressed. This is evidence for a reversible initial transamination reaction:  Ti(NMe2)4 + NH3 ⇄ (Me2N)3Ti−NH2 + HNMe2. The proposed mechanism for ...

Chemical vapor deposition of tin from tetrakis(dimethylamido)titanium and ammonia : kinetics and mechanistic studies of the gas-phase chemistry

A mixture of the tungsten allylimido complexes Cl4(RCN)W(NC3H5) (3a, R = CH3 and 3b, R = Ph) was tested as a single-source precursor for growth of tungsten nitride (WNx) or carbonitride (WNxCy) thin films. Films deposited from 3a,b below 550 °C contained amorphous β-WNxCy, while those deposited at higher temperatures were polycrystalline. Film growth rates from 3a,b ranged from 5 to 10 A/min over a temperature range of 450−650 °C, and the apparent activation energy for film growth was 0.15 eV. A plot of the Ea values for deposition from Cl4(RCN)W(NR‘) [R‘ = Ph, iPr, allyl] against the N−C imido bond strengths for the analogous amines R‘NH2 is linear, implicating cleavage of the N−C bond as the rate-determining step in film growth. The correlation of mass spectral fragmentation patterns for Cl4(RCN)W(NR‘) with film properties such as nitrogen content supports the significance of facile N−C bond cleavage in film growth.

Tungsten Allylimido Complexes Cl4(RCN)W(NC3H5) as Single-Source CVD Precursors for WNxCy Thin Films. Correlation of Precursor Fragmentation to Film Properties

High aspect ratio contacts: A review of the current tungsten plug process

MOCVD of tungsten nitride (WNx) thin films from the imido complex Cl4(CH3CN)W(NiPr)

Low temperature MOCVD of advanced barrier layers for the microelectronics industry

Material properties are reported of high quality TiN thin films, deposited by a low temperature (400–450 C) and low pressure (10 Torr) metalorganic chemical vapor deposition process using tetrakis(diethylamino)Ti and ammonia. Layer resistivities of less than 200 μΩ cm are achieved in 300 to 500 A thick films. The carbon and oxygen content in the films is found to be low (<3% C, <0.5% O). Conformality of the films in small contact holes is sufficient for the films to be applicable as diffusion barrier and adhesion layers in integrated circuit manufacturing at the 0.25 μm generation. Integration of the MOCVD-TiN films in a Ti/TiN/Al-alloy metallization scheme is also reported. The diffusion barrier performance of the MOCVD-TiN layers is found to exceed that of PVD-TiN layers.

MOCVD-TiN Barrier Layers for ULSI Applications

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

Jack Yang

Author Tools

Chat about Author

Papers

Low temperature MOCVD of advanced barrier layers for the microelectronics industry

MOCVD-TiN Barrier Layers for ULSI Applications