This Review highlights basic and transition metal conducting and semiconducting oxides. We discuss their material and electronic properties with an emphasis on the crystal, electronic, and band structures. The goal of this Review is to present a current compilation of material properties and to summarize possible uses and advantages in device applications. We discuss Ga2O3, Al2O3, In2O3, SnO2, ZnO, CdO, NiO, CuO, and Sc2O3. We outline the crystal structure of the oxides, and we present lattice parameters of the stable phases and a discussion of the metastable polymorphs. We highlight electrical properties such as bandgap energy, carrier mobility, effective carrier masses, dielectric constants, and electrical breakdown field. Based on literature availability, we review the temperature dependence of properties such as bandgap energy and carrier mobility among the oxides. Infrared and Raman modes are presented and discussed for each oxide providing insight into the phonon properties. The phonon properties also provide an explanation as to why some of the oxide parameters experience limitations due to phonon scattering such as carrier mobility. Thermal properties of interest include the coefficient of thermal expansion, Debye temperature, thermal diffusivity, specific heat, and thermal conductivity. Anisotropy is evident in the non-cubic oxides, and its impact on bandgap energy, carrier mobility, thermal conductivity, coefficient of thermal expansion, phonon modes, and carrier effective mass is discussed. Alloys, such as AlGaO, InGaO, (Al xIn yGa1− x− y)2O3, ZnGa2O4, ITO, and ScGaO, were included where relevant as they have the potential to allow for the improvement and alteration of certain properties. This Review provides a fundamental material perspective on the application space of semiconducting oxide-based devices in a variety of electronic and optoelectronic applications.

A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3

This work demonstrates vertical Ga2O3 Schottky barrier diodes (SBDs) with a novel junction termination extension (JTE) comprising multiple layers of sputtered p-type nickel oxide (NiO). The NiO layers have the varied lengths to enable a graded decrease in effective charge density away from the main junction. The fabrication of this JTE obviates the etch or implantation and shows good throughput. The fabricated Ga2O3 SBDs exhibit a forward voltage below 1.9 V at the current density of 100 A/cm2, a differential specific on-resistance of 5.9 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula> cm2, and a breakdown voltage over 2.5 kV. The Baliga’s figure of merit (FOM) exceeds 1 GW/cm2 and is among the highest in multi-kilovolt Ga2O3 SBDs. Besides, the capacitance of the JTE region is extracted, allowing for evaluation of the capacitance, charge, and switching FOM of 1.7 kV-class Ga2O3 SBDs with varied current ratings. The results show good promise of Ga2O3 SBDs for kilovolt power electronics.

2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications

Benefitted from progress on the large-diameter Ga2O3 wafers and Ga2O3 processing techniques, the Ga2O3 power device technology has witnessed fast advances toward power electronics applications. Recently, reports on large-area (ampere-class) Ga2O3 power devices have emerged globally, and the scope of these works have gone well beyond the bare-die device demonstration into the device packaging, circuit testing, and ruggedness evaluation. These results have placed Ga2O3 in a unique position as the only ultra-wide bandgap semiconductor reaching these indispensable milestones for power device development. This paper presents a timely review on the state-of-the-art of the ampere-class Ga2O3 power devices (current up to >100 A and voltage up to >2000 V), including their static electrical performance, switching characteristics, packaging and thermal management, and the overcurrent/overvoltage ruggedness and reliability. Exciting research opportunities and critical technological gaps are also discussed.

https://iopscience.iop.org/article/10.35848/1347-4065/acb3d3/pdf

Recent progress of Ga2O3 power technology: large-area devices, packaging and applications

Abstract Power semiconductor devices are fundamental drivers for advances in power electronics, the technology for electric energy conversion. Power devices based on wide-bandgap (WBG) and ultra-wide bandgap (UWBG) semiconductors allow for a smaller chip size, lower loss and higher frequency compared with their silicon (Si) counterparts, thus enabling a higher system efficiency and smaller form factor. Amongst the challenges for the development and deployment of WBG and UWBG devices is the efficient dissipation of heat, an unavoidable by-product of the higher power density. To mitigate the performance limitations and reliability issues caused by self-heating, thermal management is required at both device and package levels. Packaging in particular is a crucial milestone for the development of any power device technology; WBG and UWBG devices have both reached this milestone recently. This paper provides a timely review of the thermal management of WBG and UWBG power devices with an emphasis on packaged devices. Additionally, emerging UWBG devices hold good promise for high-temperature applications due to their low intrinsic carrier density and increased dopant ionization at elevated temperatures. The fulfillment of this promise in system applications, in conjunction with overcoming the thermal limitations of some UWBG materials, requires new thermal management and packaging technologies. To this end, we provide perspectives on the relevant challenges, potential solutions and research opportunities, highlighting the pressing needs for device–package electrothermal co-design and high-temperature packages that can withstand the high electric fields expected in UWBG devices. 

https://iopscience.iop.org/article/10.1088/1361-6463/acb4ff/pdf

Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

The low thermal conductivity of Ga2O3 has arguably been the most serious concern for Ga2O3 power and RF devices. Despite many simulation studies, there is no experimental report on the thermal resistance of a large-area, packaged Ga2O3 device. This work fills this gap by demonstrating a 15-A double-side packaged Ga2O3 Schottky barrier diode (SBD) and measuring its junction-to-case thermal resistance ( ${R}_{\theta {\mathrm {JC}}}$ ) in the bottom-side- and junction-side-cooling configurations. The ${R}_{\theta \mathrm{JC}}$ characterization is based on the transient dual interface method, i.e., JEDEC 51-14 standard. The ${R}_{\theta \mathrm{JC}}$ of the junction- and bottom-cooled Ga2O3 SBD was measured to be 0.5 K/W and 1.43 K/W, respectively, with the former ${R}_{\theta \mathrm{JC}}$ lower than that of similarly-rated commercial SiC SBDs. This low ${R}_{\theta \mathrm{JC}}$ is attributable to the heat extraction directly from the Schottky junction instead of through the Ga2O3 chip. The ${R}_{\theta \mathrm{JC}}$ lower than that of commercial SiC devices proves the viability of Ga2O3 devices for high-power applications and manifest the significance of proper packaging for their thermal management.

Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging

This work presents a PCB-embedded silicon carbide (SiC) MOSFET half-bridge module with low loop inductances, double-sided cooling, and integrated gate driver. 1.2 kV SiC MOSFET die are embedded in FR4 using a process developed by AT&S and are electrically connected and cooled through carefully placed copper-filled microvias. The electro-thermal codesign described here limited the power-loop inductance to 2.3 nH and the maximum junction temperature to less than $175 ^{\circ}\mathrm{C}$. Furthermore, integration of the gate drive circuitry within the module limited the gate-loop inductances to 2.2 nH and allowed for a high power density. The measured junction-to-case thermal resistance with double-sided cooling is 0.12 K/W, which is 57 % lower than that of a TO-247 package. A peak efficiency of 98.2 % was achieved when the PCB-embedded half-bridge modules were tested in a 22 kW three-phase ac-dc converter.

Design and Analysis of a PCB-Embedded 1.2 kV SiC Half-Bridge Module

Surface-mount packages offer Silicon Carbide (SiC) MOSFETs with many advantages, including highly reduced parasitic inductance, smaller size, and reduced manufacturing cost. However, in high power applications, the thermal performance of the discrete surface-mount device (SMD) is concerning compared to through-hole counterparts. This paper seeks to evaluate various surface mount cooling approaches. Topside heat sink, thermal via, metal core printed circuit board (MC PCB), and aluminum nitride (AlN) ceramic inlay approaches are considered and evaluated in detail based on introduced thermal resistance and heat dissipation capacity. Mathematical analysis, and experimental verifications are provided to support the conclusion.

Thermal Dissipation Approach Comparison and Evaluation for SiC Surface Mount Devices

This work demonstrates a novel charge-balanced (CB) silicon carbide (SiC) MOSFET that boasts a specific on-resistance of 10 mΩ•cm2 at 4.5 kV breakdown voltage, surpassing the 1-D SiC unipolar limit. This is achieved through buried p-doped regions inside the drift layers, which are more easily scalable to higher voltages compared to the p-doped pillars used in super-junction (SJ) devices. Medium-voltage CB SiC MOSFETs with different p-doped bus widths and pitches have been fabricated and characterized in this work. The unique microstructure of these devices causes interesting macro-scale characteristics, such as distinctive steps in the capacitance–voltage curves and a turn-on voltage tail that reduces with increased temperature. The switching energy of the CB MOSFET is 92% lower than that of an IGBT at 150 °C. This paper presents and interprets these intriguing static and dynamic characteristics.

Characterization of 4.5 kV Charge-Balanced SiC MOSFETs

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Papers

Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging

Design and Analysis of a PCB-Embedded 1.2 kV SiC Half-Bridge Module

Thermal Dissipation Approach Comparison and Evaluation for SiC Surface Mount Devices

Characterization of 4.5 kV Charge-Balanced SiC MOSFETs