The Earth Observing System Microwave Limb Sounder measures several atmospheric chemical species (OH, HO/sub 2/, H/sub 2/O, O/sub 3/, HCl, ClO, HOCl, BrO, HNO/sub 3/, N/sub 2/O, CO, HCN, CH/sub 3/CN, volcanic SO/sub 2/), cloud ice, temperature, and geopotential height to improve our understanding of stratospheric ozone chemistry, the interaction of composition and climate, and pollution in the upper troposphere. All measurements are made simultaneously and continuously, during both day and night. The instrument uses heterodyne radiometers that observe thermal emission from the atmospheric limb in broad spectral regions centered near 118, 190, 240, and 640 GHz, and 2.5 THz. It was launched July 15, 2004 on the National Aeronautics and Space Administration's Aura satellite and started full-up science operations on August 13, 2004. An atmospheric limb scan and radiometric calibration for all bands are performed routinely every 25 s. Vertical profiles are retrieved every 165 km along the suborbital track, covering 82/spl deg/S to 82/spl deg/N latitudes on each orbit. Instrument performance to date has been excellent; data have been made publicly available; and initial science results have been obtained.

https://aura.gsfc.nasa.gov/science/publications/Waters_Froidevaux_Harwood_IEEE2006.pdf

The Earth observing system microwave limb sounder (EOS MLS) on the aura Satellite

Preface. Introduction, Fundamental Concepts, and Definitions. Solid-State Device Modeling. Harmonic-Balance analysis. Volterra-Series and Power-Series Analysis. Balanced Circuits. Diode Mixers. Diode Frequency Multipliers. Small-Signal Amplifiers. Power Amplifiers. Active Frequency Multipliers. Active Mixers. Oscillators. Index.

Nonlinear Microwave and RF Circuits

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics The most fundamental spin-dependent nteraction in nonmagnetic semiconductors is spin-orbit coupling Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field

/pdf/semiconductor-spintronics-1ed0d0goer.pdf

Semiconductor Spintronics

The Whole Atmosphere Community Climate Model version 6 (WACCM6) is a major update of the whole atmosphere modeling capability in the Community Earth System Model (CESM), featuring enhanced physical, chemical and aerosol parameterizations. This work describes WACCM6 and some of the important features of the model. WACCM6 can reproduce many modes of variability and trends in the middle atmosphere, including the Quasi‐Biennial Oscillation, Stratospheric Sudden Warmings and the evolution of Southern Hemisphere springtime ozone depletion over the 20th century. WACCM6 can also reproduce the climate and temperature trends of the 20th century throughout the atmospheric column. The representation of the climate has improved in WACCM6, relative to WACCM4. In addition, there are improvements in high latitude climate variability at the surface and sea ice extent in WACCM6 over the lower top version of the model (CAM6) that come from the extended vertical domain and expanded aerosol chemistry in WACCM6, highlighting the importance of the stratosphere and tropospheric chemistry for high latitude climate variability.

The Whole Atmosphere Community Climate Model Version 6 (WACCM6)

Silicon germanium (SiGe) has moved from being a research material to accounting for a small but significant percentage of manufactured semiconductor devices. This percentage is predicted to increase substantially as SiGe begins to be used in complementary metal oxide semiconductor (CMOS) technology in the future to substantially improve performance. It is the development of Si/SiGe heterostructures which has enabled band structure and strain engineering allowing Si/SiGe to be used in many different ways to improve conventional microelectronic device performance along with allowing new concepts to be explored. This paper presents a review of the material properties, growth techniques, band structure and the main electronic devices of the Si/SiGe heterostructure system. In particular, the important device technologies in mainstream microelectronics of the SiGe heterostructure bipolar transistor (HBT) and strained-Si CMOS will be reviewed before future device and optoelectronics concepts are explored.

https://iopscience.iop.org/article/10.1088/0268-1242/19/10/R02/pdf

Si/SiGe heterostructures: from material and physics to devices and circuits

The authors present a new structure which can be used as a microwave high-Q resonator for the development of narrow-band low-loss filters in a planar environment. The resonator is made of a low-loss micromachined cavity which is easy to integrate with monolithic circuits. Compared to conventional metallic resonators, the performance of this resonator is similar, but the weight and size are significantly reduced.

A micromachined high-Q X-band resonator

Stability criteria for resonant tunneling diodes are investigated. Details of how extrinsic elements, such as series inductance and parallel capacitance, affect the stability are presented. A GaAs/AlAs/InGaAs/AlAs/GaAs double-barrier diode is investigated, showing the effect of different modes of low-frequency oscillation and the extrinsic circuit required for stabilization. The effect of device stabilization on high-frequency power generation is described. The main conclusions of the paper are: (1) stable resonant tunneling diode operation is difficult to obtain, and (2) the circuit and device conditions required for stable operation greatly reduce the amount of power that can be produced by these devices. >

Power and stability limitations of resonant tunneling diodes

This paper introduces a figure-of-merit to investigate tradeoffs between amplifiers and modulation waveforms in complex digital communications systems. Class-AB amplifiers are investigated with a variety of modulation schemes to better understand the relations between amplifier efficiency, amplifier distortion, signal in-band and adjacent channel interference, and power consumption. The goal is to better understand the tradeoffs needed to design low-energy communications systems.

/pdf/nonlinear-amplifier-effects-in-communications-systems-23pcqtu8ak.pdf

Nonlinear amplifier effects in communications systems

The performance of Schottky contact semiconductor radiation detectors fabricated from semi‐insulating GaAs is highly sensitive to charged impurities and defects in the material. The observed behavior of semi‐insulating GaAs Schottky barrier alpha particle detectors does not match well with models that treat the semi‐insulating material as either perfectly intrinsic or as material with deep donors (EL2) of constant capture cross section compensated with shallow acceptors. We propose an explanation for the discrepancy based on enhanced capture of electrons by EL2 centers at high electric fields and the resulting formation of a quasineutral region in the GaAs. Presented is a simple model including field enhanced electron capture which shows good agreement with experimental alpha particle pulse height measurements.

/pdf/evidence-for-field-enhanced-electron-capture-by-el2-centers-hohjufuqyy.pdf

Evidence for field enhanced electron capture by EL2 centers in semi‐insulating GaAs and the effect on GaAs radiation detectors

A new scheme for power amplifiers is proposed, which can provide both high efficiency and linearity. The proposed amplifier operates in a virtual class-A mode under dual-bias control to maximize the power-added efficiency along with its inherent class-A linearity. The dynamic dual-bias control involves controlling both bias current and voltage of the amplifier with a varying envelope of input RF signals. The efficiency of the proposed amplifier is theoretically evaluated and compared with that of other conventional amplifier schemes. Based on theoretical analyses, several promising schemes for dual analog and digital bias control are proposed and discussed.

High-efficiency class-A power amplifiers with a dual-bias-control scheme

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