Atomic hydrogen cleaning of polar III–V semiconductor surfaces

A very effective, two-step chemical etching method to produce clean InP(100) surfaces when combined with thermal annealing has been developed. The hydrogen peroxide∕sulfuric acid-based solutions, which are successfully used to clean GaAs(100) surfaces, leave a significant amount of residual oxide on the InP surface which cannot be removed by thermal annealing. Therefore, a second chemical etching step is needed to remove the oxide. We found that strong acid solutions with HCl or H2SO4 are able to remove the surface oxide and leave the InP surface passivated with elemental P which is, in turn, terminated with H. This yields a hydrophobic surface and allows for lower temperatures to be used during annealing. We also determined that the effectiveness of oxide removal is strongly dependent on the concentration of the acid. Surfaces cleaned by HF solutions were also studied and result in a hydrophilic surface with F-terminated surface In atoms. The chemical reactions leading to the differences in behavior betw...

/pdf/optimized-cleaning-method-for-producing-device-quality-inp-3eke8z71cu.pdf

Optimized cleaning method for producing device quality InP(100) surfaces

The chemical cleaning of indium phosphide (InP),(100) surfaces is studied systematically by using photoemission electron spectroscopy. In order to achieve the necessary surface sensitivity and spectral resolution, synchrotron radiation with photon energies ranging from 60 to 600 eV are used to study the indium 4d, phosphorus 2p, carbon 1s, and oxygen 1s core levels, and the valence band. Typical H2SO4:H2O2:H2O solutions used to etch GaAs(100) surfaces are applied to InP(100) surfaces. It is found that the resulting surface species are significantly different from those found on GaAs(100) surfaces and that a second chemical cleaning step using a strong acid is required to remove residual surface oxide. This two-step cleaning process leaves the surface oxide free and with approximately 0.4 ML of elemental phosphorus, which is removed by vacuum annealing. The carbon coverage is also reduced dramatically from approximately 1 to about 0.05 ML. The chemical reactions are investigated, the resulting InP surface ...

Preparation of clean InP(100) surfaces studied by synchrotron radiation photoemission

High-energy (40keV) electrons, scattering over large angles, transfer a small fraction of their kinetic energy to the target atoms, in the same way as ions do in Rutherford backscattering experiments. The authors show here that this energy transfer can be resolved and used to determine the mass of the scattering atom. In this way information on the surface composition for thicknesses of the order of 10nm can be obtained. The authors refer to this technique as “electron Rutherford backscattering.” In addition the peak width reveals unique information about the vibrational properties (mean kinetic energy) of the scattering atoms. Here the authors demonstrate that the method can be used to identify a number of technologically important compounds.

/pdf/investigation-of-binary-compounds-using-electron-rutherford-1hbp3jvci8.pdf

Investigation of binary compounds using electron Rutherford backscattering

Investigations of MBE grown InN and the influence of sputtering on the surface composition

http://www-old.mpi-halle.mpg.de/mpi/publi/pdf/2224_96.pdf

Segregation of In atoms at clean and hydrogen passivated InP(100) surfaces

Phonon, plasmon, and vibrational modes of clean and hydrogenated molecular‐beam epitaxially grown As‐rich GaAs(100)‐c(4×4) and ion‐bombarded and annealed InP(100) 4×2 have been studied with high‐resolution electron energy‐loss spectroscopy The plasmon energy at the interface of depletion layer and bulk enabled us to determine the carrier concentration for Si‐doped GaAs samples With increasing hydrogen exposure characteristic changes in plasmon energy, its intensity and the intensity of the surface optical phonons have been observed This is explained by changes in the space charge regime Using hydrogen as a local probe provides sensitivity to the stoichiometry and to the chemical bonding situation at the uppermost surface layer It is shown that the As‐terminated GaAs(100) surface can be converted finally into a Ga‐terminated surface by etching with atomic hydrogen For InP, for the very first time an interface plasmon was observed at 90 meV, due to high S doping In contrast to GaAs, sequential hydrogenation results in the formation of metallic droplets (In), which increase in size and concentration with increasing hydrogen exposure Consequently, the phonon and plasmon intensities are reduced drastically Models of the atomic surface structures for different stages of hydrogenation are discussed

Etching of InP(100) 4×2 and molecular‐beam epitaxially grown GaAs(100)‐c(4×4) with atomic hydrogen

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Segregation of In atoms at clean and hydrogen passivated InP(100) surfaces

Etching of InP(100) 4×2 and molecular‐beam epitaxially grown GaAs(100)‐c(4×4) with atomic hydrogen