In this paper, we present a simulation study, using ATLAS-2D, of analog circuit performance metrics for the dual-material gate (DMG) MOSFETs in Part I. Part II focuses on the impact of double-layer gate stack architecture on the analog performance and fT-gain relationship of the silicon-on-nothing MOSFETs with and without DMG. The simulation results in Part I demonstrate that, out of the several combinations in DMG MOSFET design studied, the DMG device with an LM1/L ratio of frac12 amalgamates the advantages of using a high metal workfunction gate M1 and a low metal workfunction gate M2 in the most efficient manner. An increase in early voltage and a reduced output conductance from the DMG MOSFET design are the driving forces for the observed performance improvement.

Dual Material Double-Layer Gate Stack SON MOSFET: A Novel Architecture for Enhanced Analog Performance—Part I: Impact of Gate Metal Workfunction Engineering

The synthesis of tungsten silicides by self-propagating combustion has been successfully accomplished under the influence of an electric field Materials with starting composition ranging from 6 to 30 wt % Si were investigated by the method of field-activated combustion synthesis (FACS) A threshold field value was required to initiate a self-sustaining wave; the threshold value depended on composition It was shown that the level of the applied field can influence the mechanism of silicide formation The silicide W 5 Si 3 could be formed only at relatively high field values while WSi 2 can be formed at any field The effect of the field on the silicide formation is discussed in terms of its role in liquid phase formation

The influence of an electric field on the mechanism of combustion synthesis of tungsten silicides

We report a study of the formation of tungsten silicide at the W-Si interface, induced by multipulse (up to 300 shots) XeCl excimer-laser irradiation of W(150 nm)/Si and W(500 nm)/Si samples. Laser fluences ranging from 0.6 to 1.8 J/cm2 were used. After laser treatment the samples were examined by different diagnostic techniques: Rutherford backscattering spectrometry, X-ray scattering, resistometry, and surface profilometry. Numerical computations of the evolution and depth profiles of the temperature in the samples as a consequence of a single 30 ns laser pulse were performed as well. The results indicate that it is possible to obtain a tungsten silicide layer at the W-Si interface at quite low fluences. The layer thickness increases with the number of laser pulses. Complete reaction of the 150 nm thick W film with silicon was obtained at the fluence of 1.2 J/cm2 between 30 and 100 laser pulses and at 1.5 J/cm2 after 30 laser pulses. The sheet resistance of these silicides was 5–10 Ω. At the used fluences for the 500 nm thick W film only the onset of silicide synthesis at the W-Si interface was observed.

Tungsten silicide formation by XeCl excimer-laser irradiation of W/Si samples

The effect of DC bias on the sputter-deposition of W and W-Al on GaAs substrates was investigated. By applying a negative bias to the substrate, the concentration of impurities in the metals and at the interface, such as oxygen, was reduced, and the characteristics of the Schottky contact were improved with respect to the barrier height, the n-value and the uniformity. These results are explained by the reverse sputtering effect for the substrate. This technique was applied to the gate formation of GaAs MESFETs, and the uniformity of the threshold voltage distribution within a 2-inch wafer was much improved.

Effect of Bias Sputtering on W and W-Al Schottky Contact Formation and its Application to GaAs MESFETs : III-V Compound Semiconductors Devices and Materials( Solid State Devices and Materials 1)

We report on the fabrication of an all-refractory GaAs field-effect transistor having non-alloyed source and drain ohmic contacts and a TiW/Au refractory gate metallization. The ohmic contacts consist of amorphous TiWSi/sub x/ metallization and intervening graded InGaAs layers grown by low pressure organometallic vapor phase epitaxy (LPOMVPE). The amorphous TiWSi/sub x/, is formed using alternating layers of TiW(10 /spl Aring/) and Si(1.5 /spl Aring/) deposited by an RF magnetron sputtering technique. The resulting all-refractory FET devices exhibited excellent dc transistor characteristics with measured transconductance of 140 mS/mm. The dc performance of these devices was comparable to conventional devices with AuGe/Ni/Au contacts fabricated using similar material structures. >

All-refractory GaAs FET using amorphous TiWSi/sub x/ source/drain metallization and graded-In/sub x/Ga/sub 1/spl minus/x/As layers

A co-sputtering process is characterized which allows the deposition of WSi0.4 layers for Schottky gates of GaAs self-aligned MESFETs. The process parameters were optimized to yield films with low stress, good adhesion and a high interface stability during 800°C n+ implant activation anneal. The good diffusion barrier properties of the Schottky metal can be attributed to the amorphous nature of the film. This implies a natural explanation of the optimum film composition. Employing various analytical methods the gate metal/GaAs interface was characterized after 800°C anneal. I−V diode measurements were performed to obtain contact electrical properties such as barrier height and ideality factor. MESFETs with different channel implants down to 10 keV were fabricated to confirm the good stability of the Schottky contact.

WSix refractory gate metal process for GaAs MESFETs

Characterization of WSix gate metal process for GaAs MESFET's

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

J. Willer

Author Tools

Chat about Author

Papers

WSix refractory gate metal process for GaAs MESFETs

Characterization of WSix gate metal process for GaAs MESFET's