J. Wecker
Infineon Technologies
37 Papers
219 Citations
J. Wecker is an academic researcher from Infineon Technologies. The author has contributed to research in topics: Magnetoresistance & Tunnel magnetoresistance. The author has an hindex of 15, co-authored 37 publications. Previous affiliations of J. Wecker include Center of Advanced European Studies and Research.
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Papers
Low tunnel magnetoresistance dependence versus bias voltage in double barrier magnetic tunnel junction
TL;DR: In this paper, the magnetic and transport properties of double magnetic tunnel junctions (DMTJ) have been investigated, and the authors report that the tunnel magnetoresistance (TMR) versus the bias voltage presents a symmetric characteristic, which indicates a good and similar quality of both AlOx barriers.
37
Thermal annealing of junctions with amorphous and polycrystalline ferromagnetic electrodes
TL;DR: In this paper, Al-oxide-based tunnel junctions with amorphous Co60Fe20B20 and polycrystalline Co90Fe10 ferromagnetic (FM) electrodes were studied and the evolution of tunnel magnetoresistance and barrier characteristics (resistance-area product, effective thickness, height, and asymmetry) as a function of the annealing temperature up to 400°C.
32
Evolution of barrier asymmetry in magnetic tunnel junctions
TL;DR: In this article, the authors show that the measured current/voltage characteristics of Co/Cu/Co/Al2O3/Co tunnel junctions develop a large asymmetry upon annealing at a temperature larger than 230°C.
23
Large tunnel magnetoresistance with plasma oxidized MgO barrier
TL;DR: In this article, a polycrystalline MgO barrier with Co50Fe50 ferromagnetic electrodes was used for magnetic tunnel junctions with a poly(n) oxide barrier, prepared by plasma oxidation, and a large tunnel magnetoresistance of 60% was obtained at room temperature.
18
Patent
Force sensor array having magnetostrictive magnetoresistive sensors and method for determining a force
Eckard Dr. Quandt,Manfred Ruehrig,Stephan Schmitt,Bernhard Winkler,J. Wecker,Juergen Zimmer +5 more
- 07 Mar 2006
TL;DR: In this paper, a force sensor has a layer sequence for determining a force acting on the layer sequence along a predefined force axis, which includes, arranged successively in a vertical direction, a first magnetic layer with a first magnetization direction.
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