J.W. Chen
University of Freiburg
5 Papers
38 Citations
J.W. Chen is an academic researcher from University of Freiburg. The author has contributed to research in topics: Particle detector & Schottky barrier. The author has an hindex of 4, co-authored 5 publications.
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Papers
Evaluation of active layer properties and charge collection efficiency of GaAs particle detectors
J.W. Chen,T. Frömmichen,J. Ludwig,M. Köhler,T. Plötze,M. Rogalla,K. Runge,D.G Ebling,Michael Fiederle,P. Hug +9 more
TL;DR: In this paper, the Schottky barrier leakage current is found to be responsible for the variation of the electrically active deep centers and it therefore influences the charge collection efficiency (c.c.e.).
28
Beam tests of GaAs strip detectors
J.W. Chen,R. Geppert,R. Irsigler,J. Ludwig,J. Pfister,T. Plötze,M. Rogalla,K. Runge,F. Schäfer,Th. Schmid,S. Söldner-Rembold,M. Webel +11 more
TL;DR: In this paper, position dependent measurements of cross-talk between strips and the charge collection efficiency were performed at the 1.5 MeV He + beam of the Freiburg Van de Graaff facility.
Investigation of the compensation mechanism in semi-insulating GaAs from alpha-spectra studies at low temperature
TL;DR: In this article, the results of charge collection measurements on liquid encapsulated Czochralski grown semi-insulating GaAs devices for alpha particles were presented, which demonstrates a drastic enhancement of the charge collection efficiency after prolonged illumination with 1.086 μm below-gap light.
5
Influence of the compensation in semi-insulating GaAs on the particle detector performance
M. Rogalla,J.W. Chen,R. Geppert,R Göppert,M. Kienzle,R. Irsigler,J. Ludwig,K. Runge,D.G Ebling,Th. Schmid,X. Liu,J. Kruger,Eicke R. Weber +12 more
- 29 Apr 1996
TL;DR: In this paper, the influence of the compensation on the formation of the space charge region and charge collection efficiency (CCE) for alpha particles was studied, and a strong dependence of the CCE on the ionized state of the arsenic antisite defect As/sub Ga//sup +/ and the resistivity determined from the Norde plot was observed.
3
Characterization of semi-insulating GaAs for detector application
M. Rogalla,J.W. Chen,R. Geppert,M. Kienzle,R. Irsigler,J. Ludwig,K. Runge,Michael Fiederle,K.W. Benz,Th. Schmid,C da Via,S Lauxtermann,X. Liu,J Krueger,Eicke R. Weber +14 more
TL;DR: In this paper, the authors present a theoretical model of the Schottky detector which simulates detector properties according to relevant parameters such as the resistivity p, the mobility of the charge carriers, the energy level EDD and concentration NDD of the bulk defects and the leakage-current jL of the device.