J. Viaene
Katholieke Universiteit Leuven
11 Papers
119 Citations
J. Viaene is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: High voltage & Breakdown voltage. The author has an hindex of 7, co-authored 11 publications.
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Papers
Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop
Denis Marcon,J. Viaene,Paola Favia,Hugo Bender,Xuanwu Kang,Silvia Lenci,Steve Stoffels,Stefaan Decoutere +7 more
TL;DR: The two most common failure modes for AlGaN/GaN-based HEMTs are not correlated despite both might concur to the device degradation, and an excellent stability is shown for devices with reduced Al content in the Al GaN barrier.
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Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si 3 N 4
Joff Derluyn,M. Van Hove,Domenica Visalli,Anne Lorenz,Denis Marcon,Puneet Srivastava,Karen Geens,B. Sijmus,J. Viaene,Xuanwu Kang,J. Das,Farid Medjdoub,Kai Cheng,Stefan Degroote,Maarten Leys,Gustaaf Borghs,Marianne Germain +16 more
- 01 Dec 2009
TL;DR: In this paper, the Si 3 N 4 not only acts as a passivation layer but also acts as an electron donating layer, which is crucial in the device concept as it acts as electron donor layer.
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Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop
Denis Marcon,J. Viaene,Paola Favia,Hugo Bender,Xuanwu Kang,Silvia Lenci,Steve Stoffels,Stefaan Decoutere +7 more
- 15 Jul 2013
TL;DR: In this article, a failure analysis reveals the formation of crystallographic defects in the AlGaN layer along the whole width of the gate, in agreement with the inverse piezoelectric theory.
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Si Trench Around Drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance
Puneet Srivastava,Herman Oprins,M. Van Hove,J. Das,Pawel E. Malinowski,Benoit Bakeroot,Denis Marcon,Domenica Visalli,Xuanwu Kang,Silvia Lenci,Karen Geens,J. Viaene,Kai Cheng,Maarten Leys,I. De Wolf,Stefaan Decoutere,Robert Mertens,Gustaaf Borghs +17 more
- 01 Jan 2011
TL;DR: In this article, the first measurement results to obtain over 2 kV breakdown voltage (V BD ) of GaN-DHFETs on Si substrates by etching a Si Trench Around Drain contacts (STAD) were reported.
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GaN-based HEMTs tested under high temperature storage test
Denis Marcon,Xuanwu Kang,J. Viaene,M. Van Hove,Puneet Srivastava,Stefaan Decoutere,Robert Mertens,Gustaaf Borghs +7 more
TL;DR: The failure investigation has shown that only the gate and drain leakage currents were strongly affected by the high temperature storage test, and a Au inter-diffusion phenomenon with Ni at the gate level, resulting in a worsening of the gate–AlGaN interface.
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