This paper highlights the intrinsic reliability capabilities of Intel's 22nm process technology, which introduced the tri-gate transistor architecture and features a 3rd generation high-κ/metal-gate process. Results are detailed from all traditional transistor reliability mechanisms, including BTI, TDDB, SILC, and HCI. In addition, characteristics unique to this transistor architecture and process technology are described.

Intrinsic transistor reliability improvements from 22nm tri-gate technology

A comprehensive modeling framework is presented to predict the time kinetics of negative bias temperature instability stress and recovery during and after dc and ac stresses and also during mixed dc–ac stress. The model uses uncorrelated contributions from the generation of interface and bulk traps and hole trapping in preexisting bulk traps. Ultrafast measured data at different stresses and recovery biases, temperature, duty cycle and frequency, as well as arbitrary time segments with dynamically varying voltage, frequency, and activity are predicted. The role of nitrogen in the gate insulator is explained. End-of-life degradation is determined under dc and ac use conditions.

BTI Analysis Tool—Modeling of NBTI DC, AC Stress and Recovery Time Kinetics, Nitrogen Impact, and EOL Estimation

The impact of self-heating effect (SHE) on device reliability characterization, such as BTI, HCI, and TDDB, is extensively examined in this work. Self-heating effect and its impact on device level reliability mechanisms is carefully studied, and an empirical model for layout dependent SHE is established. Since the recovery effect during NBTI characterization is found sensitive to self-heating, either changing V
 T
 shift as index or adopting μs-delay measurement system is proposed to get rid of SHE influence. In common HCI stress condition, the high drain stress bias usually leads to high power or self-heating, which may dramatically under-estimate the lifetime extracted. The stress condition V
 g
 = 0.6~0.8V
 d
 is suggested to meet the reasonable operation power and self-heating induced temperature rising. Similarly, drain-bias dependent TDDB characteristics are also under-estimated due to the existence of SHE and need careful calibration to project the lifetime at common usage bias.

Self-heating effect in FinFETs and its impact on devices reliability characterization

A common framework of trap generation and trapping is used to explain Negative Bias Temperature Instability (NBTI) and Positive Bias Temperature Instability (PBTI) DC and AC stress/recovery data. NBTI is explained using trap generation in Si/SiON (IL) interface and SiON (IL) bulk, together with hole trapping in pre-existing bulk SiON (IL) traps. Interface trap generation and recovery can be fully explained using Reaction-Diffusion (RD) model. PBTI is explained using trap generation in SiON (IL)/HK interface and HK bulk, together with electron trapping in pre-existing bulk HK traps. Important similarities as well as differences between N and P BTI are highlighted.

A consistent physical framework for N and P BTI in HKMG MOSFETs

The effect of PMOS transistor negative bias temperature instability (NBTI) on product performance is a key reliability concern. As technology scales and device dimensions shrink, the trend in the V T variability at both time zero and after NBTI aging increases. The time0 V T variability can be explained by the random nature of dopants, whereas the randomly generated defects in the gate oxide can account for the aging-induced device DeltaV T variability. This paper focuses on the bias temperature instability stress-induced device DeltaV T variability and the trend across several technology generations. The remarkable correlation of aging-induced DeltaV T variability to the gate oxide area suggests that the continued device geometry scaling will increase the aging-induced variability. For the first time, aging-induced DeltaV T variability was characterized on transistors fabricated with high-kappa gate dielectric that also showed similar dependence to the gate oxide area.

Effect of BTI Degradation on Transistor Variability in Advanced Semiconductor Technologies

In this paper, bias-temperature instability (BTI) characterization on 45nm high-K + metal-gate (HK+MG) transistors is presented and degradation mechanism is discussed. Transistors with an unoptimized HK film stack in the early development phase exhibited pre-existing traps and large amount of hysteresis that was consistent with literature. The optimized and final HK process demonstrated NMOS and PMOS BTI on HK+MG transistors that are better than that of SiON at matched E-fields and comparable at targeted 30% higher use fields. The final process also showed no hysteresis due to fast traps thereby allowing us to characterize its intrinsic degradation mechanism. On the optimized process, NMOS BTI is attributed primarily to electron trapping in the HK bulk and HK/SiON interfacial layer (IL) regions. PMOS BTI degradation, on the other hand, is mainly interface driven and is found to be very similar to that observed on conventional SiON transistors.

BTI reliability of 45 nm high-K + metal-gate process technology

This paper describes various measurements on self-heat performed on Intel's 22nm process technology, and outlines its reliability implications. Comparisons to thermal modeling results and analytical data show excellent matching.

Self-heat reliability considerations on Intel's 22nm Tri-Gate technology

Transition into High-K (HK) dielectric and Metal-Gate (MG) in advanced logic process has enabled continued technology scaling in support of Moore's law [1–2]. With this, CMOS operating fields have been increasing along with gate dielectric TDDB voltage acceleration factors (VAF). VAF is the most critical reliability parameter used to accurately predict the Gate oxide lifetime (TDDB) at use. This paper highlights low voltage (low-V) TDDB data is critical for the accurate assessment of HK+MG VAF and provides further evidences from both transistor- and product-level data based on 32nm technology generations.

Gate dielectric TDDB characterizations of advanced High-k and metal-gate CMOS logic transistor technology

Most of the discussions on cardiovascular diseases include the relative level of total plasma cholesterol whereas complete lipid profile is very important as clinical diagnotics for cardiovascular risk. For example, the status of triglycerides, low density lipoprotein cholesterol (LDL cholesterol), high density lipoprotein cholesterol (HDL cholesterol), thyroid functions, insulin and lipid peroxides etc as these lipids are related to cardiovascular disease either as markers of another underlying disturbance or along the same pathways of cholesterol metabolism. According to latest World Health Organization (WHO) report about 50% of the heart attacks occur in individual with high level of cholesterol. The most abundant sterol in animal system is in the form of cholesterol whereas plants lack cholesterol but they contain structurally similar other sterol and similar biosynthetic pathway exist both in plants and animals as well as some prokaryotes also synthesize some specific sterols. In 1948, the Framingham Heart Study under the direction of the National Heart Institute (now known as the National Heart, Lung, and Blood Institute or NHLBI) embarked on an ambitious project in health research. At the time, little was known about the general causes of heart disease and stroke, but the death rates for CVD had been increasing steadily since the beginning of the century and had become an American epidemic. The Framingham Heart Study became a joint project of the National Heart, Lung and Blood Institute and Boston University. The concern about cholesterol was largely fueled by this study and others that provided strong evidence that when large populations are observed, persons with higher than average serum total cholesterol have a higher incidence of coronary artery disease (CAD). Laboratory reports often mention two main types of cholesterol, the HDL cholesterol (often termed the "good" cholesterol) and LDL cholesterol (often mis-named the "bad" one. Even if the total LDL is lowered, the important fraction is actually the small LDL, which is more easily oxidized into a potentially atherogenic particle than its larger, more buoyant counterpart. Bacteria or other infectious agents are being looked at as part of the culprits as causative factors in initiating injury to the arterial wall. Cholesterol is then attracted to this ‘rough’ site on the blood vessel

/pdf/cholesterol-biosynthesis-functional-diversity-homeostasis-4elaf12blq.pdf

Cholesterol: Biosynthesis, Functional Diversity, Homeostasis and Regulation by Natural Products

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BTI reliability of 45 nm high-K + metal-gate process technology

Self-heat reliability considerations on Intel's 22nm Tri-Gate technology

Gate dielectric TDDB characterizations of advanced High-k and metal-gate CMOS logic transistor technology

Cholesterol: Biosynthesis, Functional Diversity, Homeostasis and Regulation by Natural Products