Models for the electron mobility in the three most important silicon carbide (SiC) polytypes, namely, 4H, 6H, and 3C SiC are developed. A large number of experimental mobility data and Monte Carlo (MC) results reported in the literature have been evaluated and serve as the basis for the model development. The proposed models describe the dependence of the electron mobility on doping concentration, temperature, and electric field. The low-field mobility in 4H SiC is much higher than in 6H and 3C in the doping range interesting for RF power transistors (10/sup 16/ cm/sup -3/ ...10/sup 18/ cm/sup -3/), whereas the saturation velocities in the three polytypes investigated are nearly the same (slightly above 2/spl times/10/sup 7/ cm/s at 300 K). The models developed can be easily incorporated into numerical device simulators.

Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]

Wide bandgap semiconductors show promise for high-power microwave electronic devices. Primarily due to low breakdown voltage, it has not been possible to design and fabricate solid-state transistors that can yield radio-frequency (RF) output power on the order of hundreds to thousands of watts. This has severely limited their use in power applications. Recent improvements in the growth of wide bandgap semiconductor materials, such as SiC and the GaN-based alloys, provide the opportunity to now design and fabricate microwave transistors that demonstrate performance previously available only from microwave tubes. The most promising electronic devices for fabrication in wide bandgap semiconductors for these applications are metal-semiconductor field-effect transistors (MESFETs) fabricated from the 4H-SiC polytype and heterojunction field-effect transistors (HFETs) fabricated using the AlGaN/GaN heterojunction. These devices can provide RF output power on the order of 5-6 W/mm and 10-12 W/mm of gate periphery, respectively. 4H-SiC MESFETs should produce useful performance at least through X band and AlGaN/GaN HFETs should produce useful performance well into the millimeter-wave region, and potentially as high as 100 GHz.

SiC and GaN transistors - is there one winner for microwave power applications?

High performance of high-voltage rectifiers could be realized utilizing 4H-SiC Schottky barrier diodes. A typical specific on-resistance (R/sub on/) of these devices was 1.4/spl times/10/sup 3/ /spl Omega/ cm/sup 3/ at 24/spl deg/C (room temperature) with breakdown voltages as high as 800 V. These devices based on 4H-SiC had R/sub on/'s lower than 6H-SiC based high-power rectifiers with the same breakdown voltage. As for Schottky contact metals, Au, Ni, and Ti were employed in this study. The barrier heights of these metals for 4H-SiC were determined by the analysis of current-voltage characteristics, and the reduction of power loss could be achieved by controlling the barrier heights.

High performance of high-voltage 4H-SiC Schottky barrier diodes

This article describes growth and characterization of the highest quality reproducible 3C-SiC heteroepitaxial films ever reported. By properly nucleating 3C-SiC growth on top of perfectly on-axis (0001) 4H-SiC mesa surfaces completely free of atomic scale steps and extended defects, growth of 3C-SiC mesa heterofilms completely free of extended crystal defects can be achieved. In contrast, nucleation and growth of 3C-SiC mesa heterofilms on top of 4H-SiC mesas with atomic-scale steps always results in numerous observable dislocations threading through the 3C-SiC epilayer. High-resolution X-ray diffraction (HRXRD) and high resolution cross-sectional transmission electron microscopy (HRXTEM) measurements indicate non-trivial, in-plane, lattice mismatch between the 3C and 4H layers. This mismatch is somewhat relieved in the step-free mesa case via misfit dislocations confined to the 3C/4H interfacial region without dislocations threading into the overlying 3C-SiC layer. These results indicate that the presence or absence of steps at the 3C/4H heteroepitaxial interface critically impacts the quality, defect structure, and relaxation mechanisms of single-crystal heteroepitaxial 3C-SiC films.

/pdf/cfd-growth-of-3c-sic-on-4h-6h-mesas-edgiplivdh.pdf

CFD Growth of 3C-SiC on 4H/6H Mesas

A variety of RF and microwave electronic devices can be fabricated from SiC. These SiC-based devices have many properties that make them near ideal for high temperature, high frequency, high power, and radiation hard applications. Progress in SiC bulk and epitaxial layer growth has been rapid in recent years and corresponding progress has been achieved in device fabrication and contact technology. Both 6H- and 4H-SiC substrates are commercially available, and high quality epitaxial layers can be grown. Prototype SiC electronic devices with very good DC and RF performance have been demonstrated and devices such as diodes are commercially available, while RF and high frequency transistors are rapidly approaching the commercialization state. In particular, SiC transistors such as MESFETs (MEtal Semiconductor Field-Effect Transistors) and SITs (Static Induction Transistors) with excellent DC and RF performance have been demonstrated and these devices are being developed for microwave power amplifier and oscillator applications. One of the most promising devices for microwave power applications is the MESFET. In this work the performance of microwave SiC MESFETs is investigated with a simulator that contains a physically based device model. The simulator permits the operation of the device to be examined and optimum device structures to be determined. This, in turn, permits performance capability and limitations to be investigated. The results of the simulations are compared to experimental measurements where possible, and excellent agreement between the simulated and measured data are obtained.

Experimental and Simulated Results of SiC Microwave Power MESFETs

A compact heterojunction bipolar transistor (HBT) model was employed to simulate the high frequency and high power performances of SiC-based bipolar transistors. Potential 6H-SiC/3C-SiC heterojunction bipolar transistors (6H/3C-HBT's) at case temperatures of 27/spl deg/C (300 K) through 600/spl deg/C (873 K) were investigated. The high frequency and high power performance was compared to AlGaAs/GaAs HBT's. As expected, the ohmic contact resistance limits the high frequency performance of the SiC HBT. At the present time, it is only possible to reliably produce 1/spl times/10/sup -4/ /spl Omega/-cm/sup 2/ contact resistances on SiC, so an f/sub T/ of 4.4 GHz and an f/sub max/ of 3.2 GHz are the highest realistic values. However, assuming an incredibly low 1/spl times/10/sup -6/ /spl Omega/-cm/sup 2/ contact resistance for the emitter, base, and collector terminals, an f/sub T/ of 31.1 GHz and an f/sub max/ of 12.7 GHz can be obtained for a 6H/3C-SiC HBT. >

High frequency performance of SiC heterojunction bipolar transistors

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High frequency performance of SiC heterojunction bipolar transistors