J. Schmitz
11 Papers
145 Citations
J. Schmitz is an academic researcher. The author has contributed to research in topics: Molecular beam epitaxy & Quantum well. The author has an hindex of 8, co-authored 11 publications.
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Papers
Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors
M Walther,J. Schmitz,R. Rehm,S. Kopta,Frank Fuchs,Joachim Fleißner,Wolfgang A. Cabanski,Johann Ziegler +7 more
TL;DR: In this article, the InAs/GaSb short-period superlattices (SLs) with a broken gap type-II band alignment are investigated for the fabrication of photovoltaic pin-photodetectors on GaSb substrates.
120
Effect of interfacial bonding on the structural and vibrational properties of InAs/GaSb superlattices
N. Herres,Frank Fuchs,J. Schmitz,Konstantin Mikhailovitch Pavlov,Joachim Wagner,John D. Ralston,Peter Koidl,C. Gadaleta,Gaetano Scamarcio +8 more
TL;DR: High-resolution x-ray diffraction using one- and two-dimensional mapping of symmetric and asymmetric reflections allowed an independent determination of the individual layer widths within the SL stack, including the spatial extent of the GaAs-like IF mode.
88
Optical and structural investigations of intermixing reactions at the interfaces of InAs/AlSb and InAs/GaSb quantum wells grown by molecular-beam epitaxy
TL;DR: In this paper, Raman scattering, photoluminescence and X-ray measurements were used to investigate the interface structure in molecular-beam epitaxially grown InAs/AlSb and InAs-GaSb heterostructures.
73
Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb) layers for 2.0–2.5 μm laser structures on GaSb substrates
S. Simanowski,M Walther,J. Schmitz,Rudolf Kiefer,N. Herres,Frank Fuchs,M. Maier,C. Mermelstein,Joachim Wagner,G Weimann +9 more
TL;DR: In this paper, the incorporation of As and In during MBE growth in (AlGaIn)/(AsSb) layers used for the fabrication of diode lasers in the 20-25μm wavelength range has been investigated The As content was found to depend linearly on the beam equivalent pressure for As mole fractions between y=005 and y=020.
21
Intersubband transitions in InAs/AlSb quantum wells studied by resonant Raman scattering.
TL;DR: In this paper, the authors used resonant Raman scattering to study intersubband transitions in InAs/AlSb quantum wells, where high and low-frequency coupled phonon-intersubband plasmon modes are observed.
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