This work thermodynamically clarifies the scavenging mechanism in HfO2 gate stacks on Si substrate and generalizes it to other substrates. The key is to pay attention to the Si chemical potential in SiO2 interface layer (SiO2-IL) affected by 1) Si in substrate, 2) interfacial energy at hetero-interface and 3) oxygen vacancy (VO) injected from HfO2. In addition, thanks to the generalized model, we demonstrate that the scavenging is extendable to new channel materials containing Si such as SiGe and SiC.

Self-decomposition of SiO2 due to Si-chemical potential increase in SiO2 between HfO2 and substrate — Comprehensive understanding of SiO2-IL scavenging in HfO2 gate stacks on Si, SiGe and SiC

Effective mass approximation versus full atomistic model to calculate the output characteristics of a gate-all-around germanium nanowire field effect transistor (GAA-GeNW-FET)

Ultimate Scaling of High-k Gate Dielectrics: Current Status and Challenges

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Ultimate Scaling of High-k Gate Dielectrics: Current Status and Challenges