The phenomenology of extra neutral gauge bosons

Electron transport in Si inversion layers at 300 K is studied using a self-consistent Monte Carlo solution of the Boltzmann transport equation coupled to the two-dimensional Poisson equation and the one-dimensional Schr\"odinger equation. Physical elements included in the model are (1) nonparabolicity effects to treat quantization in the inversion layer; (2) static screening of the Coulomb interactions accounting for the population of many subbands; (3) anisotropy of the deformation-potential interaction, shown to be quite important in the case of a two-dimensional electron gas (2DEG); (4) a careful analysis of the dynamic screening of the deformation-potential interaction, showing that the interaction between electrons and acoustic phonons can be approximated by the unscreened interaction in the nondegenerate limit of a 2DEG; and (5) the inclusion of interface ${\mathrm{SiO}}_{2}$ optical phonons. Up to ten subbands have been included to study the 2DEG together with a bulk-transport model employed to handle high-energy electrons. We have obtained mixed results: In the Ohmic regime, we have found a phonon-limited mobility that exhibits the correct dependence on carrier density, but which is about 20% larger than the experimental data. This still represents an improvement upon previous nonempirical theories, and even better quantitative agreement is obtained at the very low and very high carrier densities at which Coulomb scattering and scattering with surface roughness, respectively, control the mobility. At high longitudinal fields we find a bulklike saturated velocity, in agreement with some experimental results, but not with many others that we consider more reliable.

Monte Carlo study of electron transport in silicon inversion layers.

This paper presents a simple method for accurately calculating quantum mechanical transmission probability and current across arbitrary potential barriers by using the multistep potential approximation. This method is applicable to various potential barriers and wells, including continuous variations of potential energy and electron effective mass. Various potential barrier structures and a hot‐electron transistor are analyzed to show the feasibility of this method.

Calculation of transmission tunneling current across arbitrary potential barriers

Organometallic Vapor Phase Epitaxy

Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.

Synthesis and Applications of III-V Nanowires

Using the new experimental technique of hot-electron spectroscopy we have, for the first time, observed electrons in extreme nonequilibrium. When the transit-region width is comparable to the calculated hot-electron mean free path, two peaks are observed in the measured spectrum. The high-energy peak corresponds to quasiballistic electrons suffering few, if any, collisions in the transit region. The low-energy peak is due to excitation of the Fermi sea by the injected hot electrons.

Injected-hot-electron transport in GaAs

Nouvelle methode de mesure du transport des porteurs hors d'equilibre en injectant des porteurs chauds dans GaAsn + , avec un exces d'energie de 0,25 eV au-dessus du bord de la bande de conduction, puis en observant l'effet de la diffusion sur les electrons injectes a l'aide d'une barriere dopee plane comme «spectrometre d'electrons chauds». Determination de libres parcours moyens de l'ordre de 100 A

Hot-electron spectroscopy of GaAs

A simple procedure has been used to determine the optimum emitter grading for a heterojunction bipolar transistor (ABT). Use of this procedure allows maximum hole confinement in addition to minimum base/emitter turn‐on voltage, leading to a negligible collector/emitter offset voltage, both of which are necessary for high performance devices. By using a parabolic grading function at the emitter/base junction a Np+n Ga0.7Al0.3As/GaAs HBT has been fabricated, using molecular beam epitaxy, with a negligible collector/emitter offset voltage. A similar result can be obtained with a N‐i emitter where the undoped i region is linearly graded.

Optimum emitter grading for heterojunction bipolar transistors

A novel semiconductor laser formed by monolithically integrating an array of active stripes with a passive planar waveguide bearing an etched-in diffraction grating is reported. Laser emission occurs from different stripes at different, precisely predetermined, wavelengths. It is expected that this laser will find widespread application in wavelength division multiplexed networks.

/pdf/multistripe-array-grating-integrated-cavity-magic-laser-a-3ithip9sy2.pdf

Multistripe Array Grating Integrated Cavity (MAGIC) Laser: A New Semiconductor Laser for WDM Applications

Lateral and longitudinal patterning of semiconductor structures by crystal growth on nonplanar and dielectric-masked GaAs substrates: application to thickness-modulated waveguide structures

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