J. Patel
IBM
20 Papers
55 Citations
J. Patel is an academic researcher from IBM. The author has contributed to research in topics: Photolithography & Resist. The author has an hindex of 9, co-authored 20 publications.
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Papers
Integrated nanoscale deterministic lateral displacement arrays for separation of extracellular vesicles from clinically-relevant volumes of biological samples.
Joshua T. Smith,Benjamin H. Wunsch,Navneet Dogra,Navneet Dogra,Mehmet Eren Ahsen,Kayla Lee,Kamlesh K Yadav,Rachel Weil,Michael A. Pereira,J. Patel,Elizabeth A. Duch,John M. Papalia,Michael F. Lofaro,Mantu Gupta,Ashutosh K. Tewari,Carlos Cordon-Cardo,Gustavo Stolovitzky,Gustavo Stolovitzky,Stacey M. Gifford +18 more
TL;DR: NanoDLD is reported as a promising alternative technology for fast, reproducible, and automatable EV-isolation, and RNA sequencing was carried out on nanoDLD- and UC-isolated EVs from prostate cancer patient serum samples, resulting in a higher gene expression correlation between replicates.
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Wafer-scale integration of sacrificial nanofluidic chips for detecting and manipulating single DNA molecules
Chao Wang,Sung-Wook Nam,Sung-Wook Nam,John M. Cotte,Christopher V. Jahnes,Evan G. Colgan,Robert L. Bruce,Markus Brink,Michael F. Lofaro,J. Patel,Lynne Gignac,Eric A. Joseph,Satyavolu S. Papa Rao,Satyavolu S. Papa Rao,Gustavo Stolovitzky,Gustavo Stolovitzky,Stanislav Polonsky,Stanislav Polonsky,Qinghuang Lin +18 more
TL;DR: This strategy extracts a patterned sacrificial silicon layer through hundreds of millions of nanoscale vent holes on each chip by gas-phase Xenon difluoride etching to produce nanofluidic chips with complex designs and down to single-digit nanometre dimensions over 200 mm wafer scale.
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Gel-on-a-chip: continuous, velocity-dependent DNA separation using nanoscale lateral displacement
Benjamin H. Wunsch,Sungcheol Kim,Stacey M. Gifford,Yann Astier,Chao Wang,Robert L. Bruce,J. Patel,Elizabeth A. Duch,Simon Dawes,Gustavo Stolovitzky,Gustavo Stolovitzky,Joshua T. Smith +11 more
TL;DR: A phenomenological model is developed that explains the qualitative dependence of the polymer trajectories on the gap size and on the flow velocity and provides a means of fine-tuning the separation efficiency and resolution, independent of the nanoDLD pillar geometry.
42
High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy
Sungjae Lee,Cheng-Wei Cheng,Xiao Sun,Christopher P. D'Emic,Hiroyuki Miyazoe,Martin M. Frank,Michael F. Lofaro,John Bruley,Pouya Hashemi,John A. Ott,T. Ando,William T. Spratt,Guy M. Cohen,Christian Lavoie,Robert L. Bruce,J. Patel,Heinz Schmid,Lukas Czornomaz,Vijay Narayanan,R. Mo,Effendi Leobandung +20 more
- 01 Dec 2018
TL;DR: In this article, the InGaAs gate-all-around nanosheet NFETs on Si substrate using template-assisted-selective-epitaxy (TASE) and a gate-last process with thermal budget advantages were reported.
21
Hybrid lithography: The marriage between optical and e-beam lithography. A method to study process integration and device performance for advanced device nodes
Steven E. Steen,Sharee J. McNab,Lidija Sekaric,Inna V. Babich,J. Patel,J.J. Bucchignano,Michael J. Rooks,David M. Fried,Anna W. Topol,Jim R. Brancaccio,Roy Yu,John M. Hergenrother,James P. Doyle,Ron Nunes,R. Viswanathan,Sampath Purushothaman,Mary Beth Rothwell +16 more
TL;DR: It is shown how IBM has used hybrid lithography to enable early learning on back end of the line (BEOL) processes and on extremely scaled SRAM cells.
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