The amorphization of α quartz induced by light and medium mass ion bombardment has been investigated by means of Rutherford backscattering spectrometry in channeling geometry, resonant nuclear reaction analysis and mechanical surface profiling. The single crystalline samples were irradiated at 77 K with H+, N+, Ne+ and Na+ ions at energies of 10–100 keV and fluences up to 5×1016 ions/cm2. Disordering of α quartz by ion bombardment was found to occur by three-dimensional nucleation and growth of defect agglomerates and, possibly, small, spatially separated amorphous zones in the still crystalline surrounding. The nucleation rate scales with the energy density FD in elastic collisions. Above a critical energy density EC=1.92(7)eV/at deposited by nuclear collisions (corresponding to a displacement rate of 0.04 dpa) a coherent amorphous layer forms at the depth of maximum energy deposition, which then grows towards the surface and into larger depths during continued ion bombardment. Mechanical surface profili...

Ion beam induced amorphization in α quartz

Twelve different elements used for doping or isolation were implanted into GaN (and selected species into AlN and InN), and the resulting range parameters were measured by secondary ion mass spectrometry. For lighter elements such as Be, F and H, the agreement between experimental range and range straggle determined using a Pearson IV computer fitting routine and those predicted by TRIM 92 calculations was good, but for heavier elements such as Ge and Se, the discrepancy can be as much as a factor of two in range. There was little redistribution of any of the investigated species up to 700°C, except for 2H in AlN and S in GaN. Elements such as F and Be, which are generally rapid diffusers in III–V compounds, do not display any redistribution in GaN for temperatures up to 800°C.

Implantation and redistribution of dopants and isolation species in GaN and related compounds

Solid phase epitaxial growth of ion beam-amorphized α-quartz has been studied by means of Rutherford backscattering spectrometry in channeling geometry α-quartz single crystals were irradiated with Cs+ and Xe+ ions and annealed in air or in vacuum at 500–900 °C Complete epitaxial regrowth has been observed in the Cs-irradiated samples, after 875 °C annealing in air On the other hand, vacuum annealing provided only incomplete regrowth of the amorphous layer, while Xe-irradiated α-quartz could not be regrown up to 900 °C The behavior of Cs in the recrystallization process is discussed in terms of the SiO2-network topology

Solid phase epitaxial regrowth of ion beam-amorphized α-quartz

We report on the evaluation of ion-beam induced damage in α-quartz and its dynamic annealing behavior in the temperature range between 80 and 1050 K using Rutherford backscattering spectrometry in channeling geometry. The results illustrate that the critical temperature for inhibiting amorphization during irradiation is about Tc≈940 K. The critical fluence φc for amorphization is independent of the temperature up to 550 K, but strongly increases at higher temperatures. The activation energy for the diffusion of defects in the collision cascade or at the amorphous/crystalline interface is found to be 0.28±0.02 eV. The dynamic annealing mechanism is explained by the vacancy out-diffusion model of Morehead and Crowder.

Ion-beam induced amorphization and dynamic epitaxial recrystallization in α-quartz

The fabrication of nanoscale semiconductor devices for use in future electronics, energy, and health is among others based on the precise placement of dopant atoms into the crystal lattice of semiconductors and their concurrent or subsequent electrical activation. Dopants are built into the lattice by fabrication processes like ion implantation, plasma-based doping, and thermal annealing. Throughout the fabrication processes fundamental phenomena like dopant diffusion, activation, and clustering occur concurrently with damaging and subsequently recovering the crystal lattice. These processes are described by atomic-scale mechanisms of ion–host atom interaction and have an immense impact on the electrical performance of the resulting devices. Insight in their fundamental nature is of utmost importance for optimizing the performance of nanoscale technologies. In this paper, we demonstrate direct three-dimensional imaging of boron clusters and atoms in crystal defects using field ion microscopy. Our approach...

Direct imaging of 3D atomic-scale dopant-defect clustering processes in ion-implanted silicon

This article will briefly introduce our present understanding of high energy implantation and will then proceed to some new aspects which allow rather precise range predictions by simple analytic models. Range and damage distributions for high implantation energies (E > 1 MeV) are quite distinct from the well studied implantation profiles at lower energies. In comparison to the previously used implantation energies, the physical processes involved in the high energy part of slowing down are actually simpler and more easily described in theoretical models (dominating electronic stopping, straight flight paths with rare deflections, damage mainly isolated Frenkel pairs or small cascades, no “thermal spikes”). The simplicity of high energy scattering lends itself to analytic solutions for the (three-dimensional) range distributions, which will be introduced here.

Basic physical aspects of high energy implantation

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Basic physical aspects of high energy implantation