J. Nee
University of Michigan
4 Papers
J. Nee is an academic researcher from University of Michigan. The author has contributed to research in topics: Silicon photonics & Interconnection. The author has an hindex of 1, co-authored 1 publications.
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Papers
Temporal contrast in Ti:sapphire lasers, characterization and control
M. Nantel,Jiro Itatani,An-Chun Tien,An-Chun Tien,Jérôme Faure,D. Kaplan,M. Bauvier,Takashi Buma,Takashi Buma,P. A. Van Rompay,J. Nee,P.P. Pronko,Donald P. Umstadter,Gerard Mourou +13 more
TL;DR: In this article, the authors present a technique of high-dynamic-range plasma-shuttered streak camera contrast measurement, as well as two efficient and relatively inexpensive ways of improving the contrast of short pulse lasers without sacrificing on the output energy: a double-pass Pockels cell (PC) and clean high-energy pulse seeding of the regenerative amplifier.
Proceedings Article
Silicon Photonics IQ Modulator Targeted for 800ZR Data Center Interconnection
Jian Wang,Wen-Jr Jiang,You-Wei Chen,Mustafa Al-Qadi,Kangmei Li,Konstantin Kuzmin,Jason J. Ackert,David Dougherty,Weilin Liu,Chengkun Chen,Hiroaki Yamada,Calvin Ho,Ping Wang,Yan Zhao,Yifeng Zhou,Xu Feng Liu,G. Schmidt,J. Nee,Kenneth McGreer,M.G. Boudreau,Jibin Sun,Winston I. Way,Hui Xu +22 more
- 18 Sep 2022
TL;DR: In this paper , an all-silicon polarization-multiplexed modulator is demonstrated for the first time at 120GBaud-16QAM over 100-km SSMF, achieving per-polarization output power of -18.7dBm and rOSNR of 23.5dB at oFEC BER threshold.
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800Gbps data center interconnection employing silicon photonics
Jian Wang,Wen-Jr Jiang,Mustafa Al-Qadi,Kangmei Li,Xu Feng Liu,Weidong Tang,G. Fang,Jason J. Ackert,Chengkun Chen,Yan Zhao,Konstantin Kuzmin,Calvin Ho,Brian R. West,David Dougherty,Weilin Liu,Hiro-Omi Yamada,Ping Wang,Yifeng Zhou,W. Schmidt,J. Nee,Kenneth McGreer,M.G. Boudreau,Jibin Sun,Winston I. Way,Hui Xu +24 more
- 17 Mar 2023
TL;DR: In this paper , an all-silicon polarization-multiplexed IQ modulator targeting 800ZR pluggable transceivers for data-center interconnection is presented, achieving an equivalent transmitter output power of -15.74 dBm and an rOSNR of 26.51 dB with oFEC.
120-GBaud 16-QAM Silicon Photonics IQ Modulator for Data Center Interconnection
Jian Wang,Mustafa Al-Qadi,Wen-Jr Jiang,Kangmei Li,You-Wei Chen,Konstantin Kuzmin,Calvin Ho,Yan Zhao,Hiroaki Yamada,Jason J. Ackert,David Dougherty,Weilin Liu,Chengkun Chen,Yifeng Zhou,Ping Wang,Xu Feng Liu,Kevin Schmidt,J. Nee,Kenneth McGreer,M.G. Boudreau,Jibin Sun,Winston I. Way,Hui Xu +22 more
Abstract: We demonstrated all-silicon IQ modulators (IQMs) operating at 120-GBaud 16-QAM with suitable bandwidth, and output power. We required optical signal-to-noise-ratio (rOSNR) that have promising potential to be used in 800-Gbps small-form-factor pluggable transceivers for data center interconnection. First, we tested an IQM chip using discrete drivers and achieved a per-polarization TX output power of -18.74 dBm and an rOSNR of 23.51 dB over a 100-km standard SMF. Notably, a low BER of 1.4e-3 was obtained using our SiP IQM chip without employing nonlinear compensation, optical equalization, or an ultra-wide-bandwidth, high-ENOB OMA. Furthermore, we investigated the performance of a 3D packaged transmitter by emulating its frequency response using an IQM chip, discrete drivers, and a programmable optical filter. With a laser power of 17 dBm, we achieved a per-polarization output power of -15.64 dBm and an rOSNR of 23.35 dB.