Ta thin films were grown on Si(001) and polycrystalline Si substrates by plasma-enhanced atomic-layer deposition (PE-ALD) using TaCl5 and atomic hydrogen as precursors. The grown films have resistivity of 150–180 μm cm with a small Cl concentration between 0.5 and 2 at. %. The diffusion barrier properties were investigated using bilayer structures consisting of 200 nm Cu deposited by sputtering on ALD Ta films with various thicknesses. Three in situ analysis techniques consisting of x-ray diffraction, elastic light scattering, and resistance analysis were used to determine the diffusion barrier failure temperature of Ta films. The barriers were annealed at a temperature ramp rate of 3 °C/s from 100 to 1000 °C in forming gas. For this method using x-ray diffraction, the barrier failure temperatures were determined by monitoring the disappearance of the Cu(111) x-ray diffraction peak and appearance of Cu silicide diffraction peaks. At the diffusion barrier failure temperature, elastic light scattering indic...

Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition

TaNx diffusion barriers with good barrier properties at subnanometer thickness were deposited by plasma-enhanced atomic layer deposition (PE-ALD) from pentakis(dimethylamino)Ta. Hydrogen and/or nitrogen plasma was used as reactants to produce TaNx thin films with a different nitrogen content. The film properties including the carbon and oxygen impurity content were affected by the nitrogen flow during the process. The deposited film has nanocrystalline grains with hydrogen-only plasma, while the amorphous structure was obtained for nitrogen plasma. The diffusion barrier properties of deposited TaN films for Cu interconnects have been studied by thermal stress test based on synchrotron x-ray diffraction. The results indicate that the PE-ALD TaN films are good diffusion barriers even at a small thickness as 0.6nm. Better diffusion barrier properties were obtained for higher nitrogen content. Based on a diffusion kinetics analysis, the nanocrystalline microstructure of the films was responsible for the bette...

Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition

TaN thin film is an attractive interlayer as well as a diffusion barrier layer in [FeN/TaN](n) multilayers for the application as potential write-head materials in high-density magnetic recording. We synthesized two series of TaN films on glass and Si substrates by using reactive radio-frequency sputtering under 5-mtorr Ar/N-2 processing pressure with varied N-2 partial pressure, and carried out systematic characterization analyses of the films. We observed clear changes of phases in the films from metallic bcc Ta to a mixture of bcc Ta(N) and hexagonal Ta2N, then sequentially to fcc TaN and a mixture of TaN with N-rich phases when the N2 partial pressure increased from 0.0% to 30%. The changes were associated with changes in the grain shapes as well as in the preferred crystalline orientation of the films from bcc Ta [100] to [110], then to random and finally to fcc TaN [111], correspondingly. They were also associated with a change in film resistivity from metallic to semiconductor-like behavior in the range of 77-295 K. The films showed a typical polycrystalline textured structure with small, crystallized domains and irregular grain shapes. Clear preferred (111) stacks parallel to the substrate surface with embedded amorphous regions were observed in the film. TaN film with [ 111]-preferred orientation and a resistivity of 6.0 m Omega cm was obtained at 25% N-2 partial pressure, which may be suitable for the interlayer in [FeN/TaN](n) multilayers.

Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering

With the implementation of Cu interconnect technology, the conventional thin film deposition technique including physical vapor deposition (PVD) shows its fundamental limitation with 65 nm technology node and beyond and the need for introducing metal thin film deposition technique with excellent conformality and controllability of thickness at nanometer scale has been increased. For nanoscale devices, each of the layers or structures used in the interconnect features should be as thin and as perfect as possible. Atomic layer deposition (ALD) has sparked a lot of interest in the interconnect world for a number of reasons. The process is intrinsically atomic in nature, and results in the controlled deposition of films in sub-monolayer units. Ideally, film thickness is determined by number of deposition cycles, rather than timing of a continuous deposition process (like PVD) with a precalibrated deposition rate. Besides application as a diffusion barrier, metal films deposited by ALD is expected to be used in other critical interconnect area including direct platable layer and contact applications. In this presentation, we will present the development of ALD process for various metals and metal nitride layers including Ta, TaN, and Ru focusing on applications for back end of the line process.

The application of atomic layer deposition for metallization of 65 nm and beyond

Robust tanx diffusion barrier for cu-interconnnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition

http://lib.tkk.fi/Diss/2001/isbn951225767X/article1.pdf

Chemical stability of Ta diffusion barrier between Cu and Si

Resumen en: The reactions in the Si/Ta/Cu metallization system produced by a sputtering process were investigated by means of sheet resistance measurements, XRD, RBS...

Chemical Stability of Ta Diffusion Barrier Between Cu and Si

There is clear need to apply copper for metallisation in integrated circuits and micropackaging, but its usage has been hindered by chemical incompatibility of copper with silicon. However, tantalum-based diffusion barriers, like tantalum nitrides (Ta2N and TaN), seem to provide a feasible solution. In this study the effects of the reactive r.f-sputtering process parameters on the formation of tantalum based diffusion barriers has been studied. Moreover, the evolution of various reaction products and their relation to the barrier properties are discussed.

R.F.-sputtered tantalum-based diffusion barriers between copper and silicon

The aim of this work was to evaluate tantalum nitride thin films fabricated using reactive sputtering with adjusted deposition parameters. Thin Ta N films were deposited reactively on Si wafers using reactive RF x magnetron sputtering at various N /Ar gas ratios. The films were investigated by four-point probe sheet 2 4 1 resistance measurement, profilometry, X-ray diffraction, scanning electron microscope, 2 MeV He backscat- tering spectroscopy, and atomic force microscopy. As the amount of nitrogen was increased, the phases in the as-deposited films were identified as b-Ta, Ta N (5% N -flow), hexagonal TaN (10% N -flow) and f.c.c.-TaN 22 2 (15% N -flow) with resistivities of 166 mV cm, 234 mV cm, 505 mV cm and 531 mV cm, respectively. Only the 2 phase obtained at 5% N -flow showed a reasonable uniformity over the wafer suggesting suitability as thin film 2 resistors. The value of temperature coefficient of resistance (TCR) determined for the Ta N thin film resistor 2

R sputter deposition and properties of Ta N thin films

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Chemical stability of Ta diffusion barrier between Cu and Si

Chemical Stability of Ta Diffusion Barrier Between Cu and Si

R.F.-sputtered tantalum-based diffusion barriers between copper and silicon

R sputter deposition and properties of Ta N thin films