Processable, single-layered graphene oxide (GO) is an intriguing nanomaterial with tremendous potential for electronic applications. We spin-coated GO thin-films on quartz and characterized their sheet resistance and optical transparency using different reduction treatments. A thermal graphitization procedure was most effective, producing films with sheet resistances as low as 102 −103 Ω/square with 80% transmittance for 550 nm light. Our experiments demonstrate solution-processed GO films have potential as transparent electrodes.

Evaluation of Solution-Processed Reduced Graphene Oxide Films as Transparent Conductors

Increasing demand for raw materials means that alternatives to indium-tin oxide are desired for optically transparent electrode applications. Carbon nanotube, metal nanowire networks and regular metal grids have been investigated as possible options. In this review, these materials and recently rediscovered graphene are compared with the usual transparent conductive oxides.

Past achievements and future challenges in the development of optically transparent electrodes

Transparent conductors as solar energy materials: A panoramic review

Transparent and electrically conductive composite silica films were fabricated on glass and hydrophilic SiOx/silicon substrates by incorporation of individual graphene oxide sheets into silica sols followed by spin-coating, chemical reduction, and thermal curing. The resulting films were characterized by SEM, AFM, TEM, low-angle X-ray reflectivity, XPS, UV−vis spectroscopy, and electrical conductivity measurements. The electrical conductivity of the films compared favorably to those of composite thin films of carbon nanotubes in silica.

Graphene-silica composite thin films as transparent conductors.

https://cyberleninka.org/article/n/171141.pdf

Graphene, a promising transparent conductor

Indium Tin Oxide (ITO) thin films with a variety of microstructures were deposited using a large area conventional DC magnetron sputtering system for flat panel displays manufacturing. Highly uniform ITO films with an average thickness of ∼100 ± 3 nm on the ∼0.6 m2 substrate area were obtained. Film structures with small amounts of crystalline sites were produced by room temperature deposition, and an entirely amorphous structure with excellent etching properties was achieved through optimized incorporation of hydrogen in the film, providing a significant increase in the crystallization temperature of ITO. Post-annealing of such a sample yielded a randomly orientated polycrystalline structure with superior conductivity and transparency. The polycrystalline ITO films, produced at the sputtering substrate temperature of 200 °C, provided structures with preferential grain orientation in both and directions, controlled by the amount of oxygen and increased process pressure. The impact of oxygen and pressure with related structures on the macroscopic properties of the layers was studied. Morphological features of the films such as phase/grain structure and surface roughness were investigated using SEM and AFM. Layers with an equiaxed grain structure of about 30 nm crystal size revealed an ultra smooth surface with RMS values of about 1 nm. Specific resistivities as low as 150 μΩ cm and transmittance values above 92% at 550 nm wavelength were obtained for polycrystalline layers with preferential grain orientation.

Thin films engineering of indium tin oxide: large area flat panel displays application

On the synthesis of ultra smooth ITO thin films by conventional direct current magnetron sputtering

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Thin films engineering of indium tin oxide: large area flat panel displays application

On the synthesis of ultra smooth ITO thin films by conventional direct current magnetron sputtering