J. Malindretos
University of Göttingen
41 Papers
289 Citations
J. Malindretos is an academic researcher from University of Göttingen. The author has contributed to research in topics: Molecular beam epitaxy & Nanowire. The author has an hindex of 15, co-authored 41 publications.
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Papers
Phase Separation in Single InxGa1–xN Nanowires Revealed through a Hard X-ray Synchrotron Nanoprobe
TL;DR: The composition, short- and long-range structural order of single molecular beam epitaxy grown In(x)Ga(1-x)N nanowires using a hard X-ray synchrotron nanoprobe is reported, and an axial and radial heterogeneous elemental distribution in the single wires with Ga accumulation at their bottom and outer regions is revealed.
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Optical Emission of Individual GaN Nanocolumns Analyzed with High Spatial Resolution.
A. Urban,Marcus Müller,C. Karbaum,Gordon Schmidt,Peter Veit,J. Malindretos,Frank Bertram,Jürgen Christen,A. Rizzi +8 more
TL;DR: Selective area growth has been applied to fabricate a homogeneous array of GaN nanocolumns (NC) with high crystal quality to allow the characterization of individual BSFs, which is of high interest for studying their optical properties.
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Surface and interface electronic properties of AlGaN(0001) epitaxial layers
TL;DR: In this paper, a Si3N4 thin passivation layer was formed in-situ onto a 2DEG AlGaN/GaN structure, and the mechanism underlying the passivation of high electron mobility transistor (HEMT) structures is suggested to be based on the formation of interface states, which keep the Fermi level fixed at a position close to that of the free Al GaN surface.
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Intra-atomic photoluminescence at 1.41 eV of substitutional Mn in GaMnN of high optical quality
J. Zenneck,Tore Niermann,D. D. Mai,M. Roever,Martin Kocan,J. Malindretos,Michael Seibt,A. Rizzi,N. Kaluza,Hilde Hardtdegen +9 more
TL;DR: In this paper, a characteristic photoluminescence feature of the substitutional Mn in high quality GaMnN layers was identified using atom localization by channeling enhanced microanalysis with a transmission electron microscope.
X-ray absorption in GaGdN: A study of local structure
Gema Martínez-Criado,O. Sancho-Juan,Núria Garro,Juan Angel Sans,Andrés Cantarero,Jean Susini,M. Roever,D. D. Mai,Amilcar Bedoya-Pinto,J. Malindretos,A. Rizzi +10 more
TL;DR: In this paper, a combination of x-ray fluorescence with X-ray absorption spectroscopic techniques was used to examine not only the distribution of rare earth atoms in the GaN matrix but also the short-range structural order.
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