J. Libardi
State University of Campinas
6 Papers
16 Citations
J. Libardi is an academic researcher from State University of Campinas. The author has contributed to research in topics: Thin film & Sputtering. The author has an hindex of 4, co-authored 6 publications.
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Papers
The influence of nitrogen on the dielectric constant and surface hardness in diamond-like carbon (DLC) films
Marciel Guerino,Marcos Massi,Homero Santiago Maciel,C. Otani,Ronaldo Domingues Mansano,Patrick Verdonck,J. Libardi +6 more
TL;DR: In this article, a carbon target was sputtered by a methane/argon/nitrogen plasma in order to produce nitrogenated diamond-like carbon films (a-C:H:N).
31
Diffusion of silicon in titanium dioxide thin films with different degree of crystallinity: Efficiency of TiO2 and TiN barrier layers
J. Libardi,K. G. Grigorov,Marcos Massi,A. S. da Silva Sobrinho,Rodrigo Sávio Pessoa,B. N. Sismanoglu +5 more
TL;DR: In this paper, two kinds of reactively sputtered titanium dioxide films with columnar and fine-grained structures were investigated as diffusion barriers, preventing the silicon diffusion, and the resulting films were found to have different thicknesses being 800 and 240nm for 10% and 30% OC, respectively.
16
The influence of aluminum incorporation on the structural and electrical properties of ZnO thin films for applications in piezoresistive sensors
Guilherme W. A. Cardoso,Gabriela Leal,Marcos Massi,A. S. da Silva Sobrinho,J. Libardi +4 more
- 01 Aug 2017
TL;DR: In this paper, a dc magnetron co-sputtering was used to grow Al doped ZnO (AZO) films with different applied voltages in the Al target, deposited on Si (100) p-type substrates with a layer of 1 micron of SiO2 by thermal oxidation.
2
High quality TiO 2 deposited by reactive sputtering. Structural and electrical peculiarities influenced by the specific experimental conditions
J. Libardi,K. G. Grigorov,Marciel Guerino,A. S. da Silva Sobrinho,H. S. Maciel,J. P. Soares,Marcos Massi +6 more
- 02 Dec 2013
TL;DR: Titanium dioxide (TiO2) thin films were deposited on silicon p type (100) substrates by reactive magnetron sputtering technique at different oxygen partial pressures as discussed by the authors, and the film structure was studied by XRD, while the film composition was examined by Rutherford Backscattering Spectroscopy (RBS).
1
Electrical Conduction Mechanisms in Metal–Insulator–Metal (MIM) Structure with TiO x N y Thin Films Deposited with Different O/N Ratios
J. Libardi,K. G. Grigorov,Rodrigo S. Moraes,Marciel Guerino,Argemiro Soares da Silva Sobrinho,Marcos Massi +5 more
TL;DR: In this paper, the current-voltage characteristics of titanium oxynitride thin films were measured and the charge carrier transport mechanisms established as a function of film composition, and the dielectric constants were calculated from the high-frequency capacitance and voltage dependences.