The structure and properties of metal-semiconductor interfaces

The concentration of the major electron trap (0.82 eV below the conduction band) in GaAs (Bridgman grown) was found to increase with increasing As pressure during growth. It was further found that (for a given As pressure) the concentration of this trap decreased with increasing concentration of shallow donor dopants (Si, Se, and Te). Donor concentrations above a threshold of about 1017 cm−3 led to the rapid elimination of the trap. On the basis of these findings, the 0.82‐eV trap was attributed to the antisite defect AsGa formed during the postgrowth cooling of the crystals.

Origin of the 0.82‐eV electron trap in GaAs and its annihilation by shallow donors

A novel application of the vertical gradient freeze method to the growth of high quality III–V crystals

It is shown for the first time that hydrogen passivation of p-type GaAs produces electrical compensation of the shallow-acceptor impurity. This is demonstrated with capacitance-voltage and secondary-ion-mass spectrometry measurements on hydrogenated Zn-doped GaAs. In addition, it is shown that for comparable net dopant concentrations, passivation is far more extensive in p-type as compared to n-type GaAs; both metal-organic chemical-vapor-deposited (Zn and Se doped) and bulk GaAs (Zn and Si doped) were investigated. It is proposed that hydrogen passivation of Zn acceptors in GaAs involves interstitial diffusion of hydrogen to the vicinity of a zinc atom that is located at a gallium site. The hydrogen atom specifically bonds to an arsenic atom that is adjacent to the zinc. From the experimental results it is inferred that hydrogen passivation of shallow-acceptor impurities is a general physical phenomenon in semiconductors.

Hydrogen passivation of shallow-acceptor impurities in p-type GaAs.

The characteristics of an interferometric system based on two-wave mixing at 1.06 µm in photorefractive InP:Fe under an applied field for the detection of ultrasonic motion of a scattering surface are described. A theoretical analysis of possible configurations for the detection of small phase modulation in the undepleted-pump approximation is presented. Experimental assessment of the device for both cw and pulse regimes is performed: The sensitivity, the etendue, the response time, and the behavior under ambient vibrations or moving inspected samples are provided. This adaptive device presents many features appropriate for industrial inspection and compares advantageously with the passive confocal Fabry–Perot device that is now widely used.

https://hal-iogs.archives-ouvertes.fr/hal-00673505/document

Detection of ultrasonic motion of a scattering surface by photorefractive InP:Fe under an applied dc field

A precision Bridgman-type apparatus is described which was designed and constructed for the investigation of relationships between crystal growth parameters and the properties of GaAs crystals. Several key features of the system are highlighted, such as the use of a heat pipe for precise arsenic vapor pressure control and seeding without the presence of a viewing window. Pertinent growth parameters, such as arsenic source temperature, thermal gradients in the growing crystal and in the melt, and the macroscopic growth velocity can be independently controlled. During operation, thermal stability better than + or - 0.02 C is realized; thermal gradients can be varied up to 30 C/cm in the crystal region, and up to 20 C/cm in the melt region; the macroscopic growth velocity can be varied from 50 microns/hr to 6.0 cm/hr. It was found that the density of dislocations depends critically on As partial pressure; and essentially dislocation-free, undoped, crystals were grown under As pressure precisely controlled by an As source maintained at 617 C. The free carrier concentration varied with As pressure variations. This variation in free carrier concentration was found to be associated with variations in the compensation ratio rather than with standard segregation phenomena.

Bridgman‐Type Apparatus for the Study of Growth‐Property Relationships: Arsenic Vapor Pressure ‐ GaAs Property Relationship

Electron Trap‐Free Low Dislocation Melt‐Grown GaAs

Technological and physical aspects of the main EL2 defect in GaAs

In an extensive crystal growth and characterization study of Bridgman-grown GaAs it was established that the following factors affect the concentration of the EL2 level: (1) the As pressure during growth; (2) the partial pressure of Ga2O; (3) the concentration of shallow donors and acceptors; and (4) the post-growth cooling cycle. The role of these factors is qualitatively and quantitatively explained by attributing the 0.82 eV donor state to the antisite defect As-sub-Ga formed as a result of Ga-vacancy migration during the post-growth cooling of the crystals.

On the behaviour and origin of the major deep level (EL2) in GaAs

Large amplitude current oscillations with a thermally activated frequency and thermally — stimulated current oscillations were observed in semi-insulating GaAs for the first time These oscillations were found at DC electric fields above 500 Vcm−1, about one order of magnitude below the electric-field threshold for Gunn oscillations The activation energy of the oscillation frequency was found to be 08 eV corresponding to the dominant electron trap energy in semi-insulating GaAs (the so-called EL2 level recently attributed to the antisite arsenic [1]) A model proposed to explain the phenomena of voltage — controlled negative resistance in semi-insulating GaAs exposes the role of EL2 defect in the trapping process The capture of electrons from the conduction band by the EL2 defect has a configurational barrier of approximately 70 meV The presence of an electric field enhances this electron capture process which makes possible the migration of slow domains

Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs

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