Optical gain has been recently observed in ion implanted Si nanocrystals (nc). Critical issues to the observation of optical gain are the formation of a waveguide structure to improve the mode confinement and a large nanocrystal area den-sity in the samples. Here we confirm these results by measuring optical gain by the variable stripe length (VSL) method on a set of silicon nanocrystals (nc) formed by plasma enhanced chemical vapor deposition (PECVD) and annealing treatments. Time resolved VSL measurements with ns pulses at high pumping fluencies have revealed fast component in the recombination dynamics under gain conditions. Lifetime shortening and superlinear emission have been unambi-guously observed. The spectral shape of the fast luminescence is consistent with the amplified spontaneous emission lineshape (ASE) observed under CW pumping conditions and overlaps the gain spectral band. The observation of light amplification is critically dependent on a very delicate balance among the nc gain cross sections, the optical mode losses of the waveguide structure, and the fast non radiative Auger processes. Within a four levels model we quantify the strong competition among all these processes and we obtain a satisfactory agreement with the experiments.

Optical gain in PECVD silicon nanocrystals

Optical spectroscopic characterization of silica layers containing silicon nanocrystals (Si-nc) is described in detail. Red-
NIR photoluminescence (PL) is studied and correlations of the PL with optical and structural properties are analyzed.
The surface mechanism of PL involving Si=O bonds is supported by our results. Wavelength-selective optical
waveguiding by Si-nc/SiO 2 layers is studied. The found spectral filtering allows optical properties of Si-nc/SiO 2 layers to
be measured. Laser-induced thermal effects on structural and optical properties of free-standing Si-nc/SiO 2 films are
reported. The obtained results suggest very efficient Si-SiO 2 phase separation by intense laser light. Laser-controlled
stress of Si-nc in silica is demonstrated. The laser manipulations with Si-nc stress offer an approach to Si-nc memory
with an extremely long retention time, which can be written, read, and erased by optical means.

Silicon nanophotonics: light emission, wavelength-selective waveguiding, and laser-induced thermal effects

Stimulated emission in blue-emitting Si[sup +]-implanted SiO[sub 2] films?

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Stimulated emission in blue-emitting Si[sup +]-implanted SiO[sub 2] films?