v. 1. Elements O, HD, T, F, Cl, Br, I, He, Ne, Ar, Kr, Xe, Rn, S, N, P, and their compounds. pt. 1. Methods and computation. pt. 2. Tables v. 2. Elements C, Si, Ge, Sn, Pb, and their compounds. pt. 1. Methods and computation. pt. 2. Tables v. 3. Elements B, Al, Ga, In, Tl, Be, Mg, Ca, Sr, Ba, and their compounds. pt. 1. Methods and computation. pt. 2. Tables.

/pdf/thermodynamic-properties-of-individual-substances-f607qdecn1.pdf

Thermodynamic properties of individual substances

The plasma etching of silicon and silicon dioxide in CF4‐O2 mixtures has been studied as a function of feed‐gas composition in a 13.56‐MHz plasmagenerated in a radial‐flow reactor at 200 W and 0.35 Torr. Conversion of CF4 to stable products (CO, CO2, COF2, and SiF4) and the concentration of free F atoms ([F]) in the plasma were measured using a number of different diagnostics. The rate of etching, the concentration of F atoms, and the intensity of emission from electronically excited F atoms (3s 2 P–3p 2 P° transition at 703.7 nm) each exhibit a maximum value as a function of feed‐gas composition ([O2]); these respective maxima occur at distinct oxygen concentrations. For SiO2, the variation in etching rate with [O2] is accounted for by a proportional variation in [F], the active etchant. The etching of silicon also occurs by a reaction with F atoms, but oxygen competes with F for active surface sites. A quantitative model which takes oxygen adsorption into account is used to relate the etch rate to [F]. The initial increase of [F] with [O2] is accounted for by a sequence of reactions initiating with the production of CF3 radicals by electron impact and followed by a reaction of CF3 with oxygen. When [O2] exceeds ∼23% (under the present discharge conditions), [F] decreases due, probably, to a decrease in electron energy with an increase of oxygen in the feed gas.

Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmas

Scale of acidities in the gas phase from methanol to phenol

The nature of the charge carriers in ‘conducting’ polymers is of considerable interest at present1,2, largely on the basis of the technological potential of these materials for use as the semiconducting layer in field-effect transistors (FETs) and the emissive layer in light-emitting diodes3 (LEDs). One of the main outstanding questions concerns the relative importance of intra- versus inter-chain charge transfer in determining the overall rate of charge transport. Here we apply the pulse-radiolysis time-resolved microwave conductivity technique4 to dilute solutions of a soluble dialkoxy derivative of the semiconducting polymer poly(phenylene vinylene), PPV, by which means we determine the one-dimensional intra-chain mobilities of electrons and holes on isolated polymer chains free from inter-chain interactions. The values so obtained—0.5 and 0.2 cm2 V−1 s−1 respectively—are considerably larger than the mobilities measured previously for bulk PPV-based materials5,6,7,8,9. This suggests that considerable improvement in the performance characteristics (in particular switching time and maximum current) of organic FET and LED devices should be possible if material purity and structural order can be better controlled.

Highly mobile electrons and holes on isolated chains of the semiconducting polymer poly(phenylene vinylene)

Photocross-linking is a useful technique for the partial definition of the nucleic acid-protein interface of nucleoprotein complexes. It can be accomplished by one or two photon excitations of wild-type nucleoprotein complexes or by one photon excitation of nucleoprotein complexes bearing one or more substitutions with photoreactive chromophores. Chromophores that have been incorporated into nucleic acids for this purpose include aryl azides, 5-azidouracil, 8-azidoadenine, 8-azidoguanine, 4-thiouracil, 5-bromouracil, 5-iodouracil, and 5-iodocytosine. The various techniques and chromophores are described and compared, with attention to the photochemical mechanism.

Photocross-Linking of Nucleic Acids to Associated Proteins

Ionization potentials, appearance potentials, and heats of formation of gaseous positive ions

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Ionization potentials, appearance potentials, and heats of formation of gaseous positive ions