The present invention comprises a novel semiconductor device which further comprises a nonlinear transmission-line structure. The semiconductor device is that of a very long narrow voltage-dependent capacitor, such as a semiconductor diode or MOS capacitor, where the anode and cathode electrodes comprise the conductors of a transmission line and the depletion region comprises the dielectric of the transmission line. An input signal is applied at one end of the long, narrow structure. Such signal application results in the launch of a traveling wave traveling along the transmission-line structure. At the far end of the transmission-line structure, the signal is coupled out and applied to a load. The temporal and spatial modulation of the depletion capacitance of the semiconductor device as the traveling wave travels along the transmission-line structure results in temporal compression of the input signal. Input signals of comparatively slow transition time therefore have their transition time reduced such that the transition time of the output signal is much faster than that of the input signal. Output signals exhibiting picosecond transition times may be obtained from input signals exhibiting nanosecond transition times. Further, since the nonlinear transmission line according to the present invention may incorporate many of the properties of conventional semiconductor devices, but in a novel configuration, comparatively high-voltage nonlinear transmission lines according the present invention may be fabricated to provide correspondingly high-voltage, or high-current, output signals.

Nonlinear transmission line

An LC element, semiconductor device and a manufacturing method thereof whereby a channel 22 is formed by applying a voltage to a gate electrode 10 having a predetermined shape formed on a p-Si substrate 30 via an insulation layer 26, whereby a connection is formed between a first diffusion region 12 and a second diffusion region 14 formed at separated positions near the surface of the p-Si substrate 30; both the channel 22 and gate electrode 10 function as inductors, and between these a distributed constant type capacitor is formed, and possessing excellent attenuation characteristics over a wide band. This LC element and semiconductor device can be easily manufactured by using MOS manufacturing technology; in the case of manufacturing as a portion of a semiconductor substrate, component assembly work in subsequent processing can be omitted. Also these can be formed as a portion of an IC or LSI device.

LC element, semiconductor device and LC element manufacturing method

A variable superconducting delay line system and method having a high temperature superconducting trace and ground plane characterized by a variable inductance L per unit length and capacitance C per unit length, wherein the system and method permit users to select a delay time for an incoming signal propagating through a the transmission line. The system is adapted to keep the ratio of L/C constant, while independently changing L and C to achieve the desired delay time, which corresponds to the product of L times C.

Variable superconducting delay line having means for independently controlling constant delay time or constant impedance

The invention relates to a voltage controlled analog phase shifter for operation at millimeter and microwave wavelengths using MMIC (Monolithic Microwave Integrated circuit) fabrication techniques. The phase shifter is formed of an artificial transmission line consisting of multiple unit elements in which each unit element contains a serial transmission line-inductance and a shunt diode capacitance which is variable as a function of an applied potential. In the design, the interconnecting transmission lines may be a small fraction of a wavelength, substantially less than one-quarter wavelength, and of high impedance relative to the characteristic impedance of the phase shifter. In consequence of the lumped design, each unit element, and a phase shifter using a plurality of such unit elements may be very small. The design also exhibits a low to negligible power consumption.

MMIC (monolithic microwave integrated circuit) voltage controlled analog phase shifter

An LC element with a pn junction layer formed near the surface of a p-Si substrate by forming an n + region having a predetermined shape and in a portion thereof additionally forming a p + region having the same shape, and with first and second electrodes formed over entire length on the surface of this pn junction layer; wherein the two electrodes respectively function as inductors and by using the pn junction layer with reverse bias, a distributed constant type capacitor is formed between these inductors, thereby providing excellent attenuation characteristics over a wide band, a semiconductor device including the LC element, and a method of manufacturing the LC element. This LC element and semiconductor device can be easily manufactured; in the case of manufacturing as a portion of an IC or LSI device, component assembly work in subsequent processing can be abbreviated, and by changing the capacitance of the distributed constant type capacitor according to requirements, the characteristics can be changed.

Method of forming a semiconductor device having a LC element

An electronically variable delay line including a wafer of silicon on one side of which a thin insulating layer is deposited. A highly conducting ground plane contacts the silicon wafer on its remaining side while a highly conducting microstrip line contacts the insulating layer. The microstrip line contacts the silicon wafer through small holes etched in the insulating layer at predetermined intervals. At these holes, P-N junctions are formed. The P-N junctions are reverse biased so as to vary the effective thickness of the insulating layer to vary the delay time by creating a depletion layer within the silicon wafer which acts as an effective insulator.

A solid state variable delay line using reversed biased pn junctions

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A solid state variable delay line using reversed biased pn junctions