Electrical stimulation of retinal neurons offers the possibility of partial restoration of visual function. Challenges in neuroprosthetic applications are the long-term stability of the metal-based...

https://www.physiology.org/doi/pdf/10.1152/jn.00909.2011

Electrical stimulation of retinal neurons in epiretinal and subretinal configuration using a multicapacitor array

Totally implantable enzymatic biofuel cell and brain stimulator operating in bird through wireless communication.

We have fabricated high-kappa Ni/TiO2/ZrO2/TiN metal-insulator-metal (MIM) capacitors. A low leakage current of 8 times 10-8 A/cm2 at 125degC was obtained with a high 38- fF/mum2 capacitance density and better than the ZrO2 MIM capacitors. The excellent device performance is due to the lower electric field in 9.5-nm-thick TiO2/ZrO2 devices to decrease the leakage current and to a higher kappa value of 58 for TiO2 as compared with that of ZrO2 to preserve the high capacitance density.

High-Density and Low-Leakage-Current MIM Capacitor Using Stacked $\hbox{TiO}_{2}/\hbox{ZrO}_{2}$ Insulators

We report on the fabrication and electrical characterization of MIM capacitors using as dielectric a thin porous anodic alumina layer between two Al films. The Al2O3/Al stack is grown electrochemically by partly anodizing an Al film on Si, while a top Al film is then deposited on the aluminum oxide and patterned in order to define the capacitor area. The obtained MIM capacitors exhibit at the same time large capacitance density (above ~5 fF/μm2), low leakage current density (below ~10-9 A/cm2 at 2 V), and good thermal stability of operation, demonstrated by an a coefficient that changes by less than 10% for temperature changes of the order of 100 K. The temperature stability is further demonstrated by the low leakage current density (below ~7 × 10-9 A/cm2) even at temperatures as high as 420 K.

High-Density MIM Capacitors With Porous Anodic Alumina Dielectric

In this work, we systematically studied the influence of the plasma treatment (PT) on the structural and electrical properties of Pt/rutile-TiO2/RuO2 metal–insulator–metal capacitors. The leakage current of the 12 nm thick TiO2 dielectrics prepared by atomic layer deposition was reduced below 10−7 A cm−2 while the capacitance equivalent thickness was kept below 0.5 nm using oxygen PT of the bottom RuO2 electrode. Reflection high energy electron diffraction, transmission electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy analyses allowed the conclusion that O2 plasma smoothened the RuO2 surface and increased its oxygen content through plasma induced surface reconstruction. The nucleation of TiO2 on the plasma-treated surface was faster while the thickness of the capacitor dead layer at the TiO2/RuO2 interface was reduced.

https://iopscience.iop.org/article/10.1088/0022-3727/46/38/385304/pdf

Impact of plasma treatment on electrical properties of TiO2/RuO2 based DRAM capacitor

We report Ir/TiO2/TaN metal-insulator-metal capacitors processed at only 300degC, which show a capacitance density of 28 fF/mum2 and a leakage current of 3 times 10-8 (25degC) or 6 times 10-7 (125degC) A/cm2 at -1 V. This performance is due to the combined effects of 300degC nanocrystallized high-kappa TiO2, a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.

https://ir.nctu.edu.tw:443/bitstream/11536/8516/1/000258096000008.pdf

High Density and Low Leakage Current in $ \hbox{TiO}_{2}$ MIM Capacitors Processed at 300 $^{\circ} \hbox{C}$

We show that a conventional nitrogen plasma treatment is insufficient to suppress the formation of an interfacial layer at the bottom electrode of TiHfO metal-insulator-metal (MIM) capacitors. However, the capacitance density and leakage current of TaN/TiHfO/TaN MIM capacitors monotonically improve by exposing the lower TaN electrode to an additional oxygen plasma treatment. By performing dual oxygen and nitrogen plasma treatments on the lower electrode, the leakage current was 4.8 times 10-6 A/cm2 (at -1 V) at a 28 fF/ mum2 capacitance density.

https://ir.nctu.edu.tw:443/bitstream/11536/8303/1/000259812900007.pdf

Improvement of the Performance of TiHfO MIM Capacitors by Using a Dual Plasma Treatment of the Lower Electrode

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High Density and Low Leakage Current in $ \hbox{TiO}_{2}$ MIM Capacitors Processed at 300 $^{\circ} \hbox{C}$

Improvement of the Performance of TiHfO MIM Capacitors by Using a Dual Plasma Treatment of the Lower Electrode