J. H. Chae

TL;DR: In this article, the junction temperature of GaN-based laser diodes is measured by using the large change of forward operation voltage with temperature in GaN laser Diodes, which can be used to measure junction temperature.

TL;DR: In this article, stable temperature characteristics of threshold current and output power in InGaN blue laser diodes emitting around 450nm were reported, where the threshold current is changed by <3mA in operation temperature range from 20to80°C, and even negative characteristic temperature is observed in a certain temperature range.

TL;DR: In this article, high performance laser diodes were fabricated on lateral epitaxial overgrown GaN layers on sapphire substrates, which showed a lifetime of 1,000 hs at 50 °C under automatic power controlled conditions of 30 mW. The lifetime of LDs was also influenced by the operation voltage.

TL;DR: In this article, a GaN-based high-power single transverse-mode laser diodes (LDs) emitting at 405 nm were designed to exhibit a high level of catastrophic optical damage and small beam divergence angle.