J.F. Aschner
Bell Labs
3 Papers
7 Citations
J.F. Aschner is an academic researcher from Bell Labs. The author has contributed to research in topics: Transistor & Common emitter. The author has an hindex of 1, co-authored 2 publications.
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Papers
Impact of the COVID-19 pandemic on children’s sleep habits: an ECHO study
Maristella Lucchini,Traci A. Bekelman,Ming Li,Emily A. Knapp,Yanan Dong,Suyin Ballard,Sean Deoni,Anne L Dunlop,Amy J. Elliott,Assiamira Ferrara,Chloe Friedman,Maren Galarce,Diane Gilbert-Diamond,Deborah H. Glueck,Monique M. Hedderson,Christine W. Hockett,Margaret R. Karagas,Monique K. LeBourgeois,Amy Margolis,Julia McDonald,Pak Yan Ngai,Matthew Pellerite,Katherine A. Sauder,Teng F. Ma,Dana Dabelea,P. Brian Smith,Kristin Newby,Lisa P. Jacobson,Dianne Catellier,Rachel Gershon,Daltro Cella,Akram N. Alshawabkeh,J.F. Aschner,Stephanie L. Merhar,Andrea L. Lampland,A Reynolds,Mark L. Hudak,Gloria S. Pryhuber,Phil Moore,Lisa K. Washburn,Lisa A. Croen,Chirs Karr,Alex W. Mason,Barry M. Lester,Burch M. Carter,Carmen J. Marsit,Steve Pastyrnak,Cheryl Neal,Loni A. Smith,Jennifer Helderman,Cindy T. McEvoy,Rubin Tepper,Jean M. Kerver,Charles Barone,Patricia McKane,Nigel Paneth,Michael R. Elliott,Leonardo Trasande,Sheela Sathyanarayana,Nicole R. Bush,R. Nguyen,Evan Barrett +61 more
TL;DR: In this paper , the authors investigated sleep habit changes during the COVID-19 pandemic in 528 children 4-12 years old in the US, leveraging data from the Environmental Influences on Child Health Outcomes (ECHO) Program.
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A Double Diffused Silicon High‐Frequency Switching Transistor Produced by Oxide Masking Techniques
TL;DR: In this paper, the relative merits of two double diffused transistor structures are discussed, one of which employs a localized emitter and the other employs a masking property against the subsequent phosphorus diffusion.
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A silicon medium-power transistor for high-current high-speed switching applications
TL;DR: A diffused base, diffused emitter, n-p-n silicon switching transistor has been developed for high-current applications such as switching magnetic memories as mentioned in this paper, which is designed to operate as a switch at the 0.75-ampere level.
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